JANTXV2N7236 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA packagePD - 90495GIRFM9140JANTX2N7236JANTXV2N7236JANS2N7236POWER MOSFETREF:MIL-PRF-19500/595THRU-HOLE (TO- ..
JBP28L22MJ ,256x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
JBP28L42MJ ,512x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
JBP28S42MJ ,512x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
JBP28S42MJ ,512x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
JC030A-M , JC030-Series Power Modules 18 Vdc to 36 Vdc Inputs 2 Vdc to 15 Vdc Outputs13 W to 30 W
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B-QC25 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7B801825B-QC75 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7D803671B-HC25 , 256Kx36 & 512Kx18 SRAM
K7I161882B-FC16 , 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
IRFM9140-JANTXV2N7236
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
Internal onol
TOR Rectifier
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFM9140 0.209 -18A
HEXFET® MOSFET technology is the key to International
Rectifer's advanced line of power MOSFET transistors. The
efrlcient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
PD - 90495G
IRFM91 AO
JANTX2N7236
JANTXV2N7236
JANSZN7236
REF:MIL-PRF-1 9500/595
100V, P-CHANNEL
HEXFET' MOSFETTECHNOLOGY
TO-254AA
ease of paralleling and electrical parameter temperature Features:
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers, a Simple Drive Requirements
audio amplifiers, high energy pulse circuits, and virtually " Ease of Paralleling
any application where high reliability is required. The '' Hermetically Sealed
HEXFET transistor's totally isolated package eliminates the n Electrically Isolated
need for additional isolating material between the device a Dynamic dv/dt Rating
and the heatsink. This improves thermal efficiency and '1 Light-weight
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10\/, TC = 25°C Continuous Drain Current -18
ID @ VGS = -10\/, TC = 100°C Continuous Drain Current -11 A
IDM Pulsed Drain Current C) -72
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current co -18 A
EAR Repetitive Avalanche Energy C) 12.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (typical) g
For footnotes refer to the last page
1
09/22/03
IRFM9140 International
TOR Rectifier
Electrical Characteristics @Tl = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -1.0mA
ABVDSS/ATJ Temperature Coemcient of Breakdown - -0.087 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.20 Q VGS = -1OV, ID = -11A©
Resistance - - 0.22 VGS = -10V, ID = -18A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, t = -250pA
gfs Forward Transconductance 6.2 - - S (ty) VDS > -15\/, IDS = -11A©
IDSS Zero Gate Voltage Drain Current - - -25 V03: -80\/, VGs= 0V
- - -250 HA VDs = -80V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - -100 nA VGS = -20V
less Gate-to-Source Leakage Reverse - - 100 VGS =20V
09 Total Gate Charge - - 60 VGS = -10\/, ID: -18A
Qgs Gate-to-Source Charge - - 13 nC VDS = -50V
Qgd Gate-to-Drain ('Miller') Charge - - 35.2
td(on) Turn-On Delay Time - - 35 VDD = -50\/, ID = -11A
tr Rise Time - - 85 RG = 9.19, VGS = -10V
td(om Turn-Off Delay Time - - 85 ns
tf FallTime - - 65
Ls + LD Total Inductance - 6.8 - nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mml0.25in. from package)
Ciss Input Capacitance - 1400 VGS = 0V, VDs = -25V
Coss Output Capacitance - 600 - pF t= 1.0MHz
Crss Reverse Transfer Capacitance - 200 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -18 A
ISM Pulse Source Current (Body Diode) co - - -72
VSD Diode Forward Voltage - - -5.0 V Tj = 25°C, Is = -18A, VGS = 0V ©
trr Reverse Recovery Time - - 280 nS Tj = 25°C, IF = -18A, di/dt s-100A/ps
ORR Reverse Recovery Charge - - 3.6 we VDD s: -50V co
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.0
RthCS Case-to-sink - 0.21 - °C/W
RthJA Junction to Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
