JANTX2N7225 ,200V Single N-Channel Hi-Rel MOSFET in a TO-254AA packagePD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V ..
JANTX2N918 , NPN LOW POWER SILICON TRANSISTOR
JANTXV1N5418 , VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
JANTXV1N5659A , 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N6341 , 500 mW GLASS ZENER DIODES
JANTXV1N6638 , COMPUTER SWITCHING DIODE
K7A161830B-QC16 , 512Kx36 & 1Mx18 Synchronous SRAM
K7A203200B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203600B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B-QC25 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
IRFM250-JANTX2N7225
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
PD- 90554E
International
. . IRFM250
TOR, RGCTI h er JANTX2N7225
POWER MOSFET . JANTXV2N7225
THRU-HOLE (TO-254AA) REF:MlL-PRF-''19500/592
200V, N-CHANNEL
Product Summary HEXFET® MOSFETTECHNOLOGY
Part Number RDS(on) ID
IRFM250 0.100 n 27.4A "Crest,)),
HEXFET® MOSFET technology is the key to International
RecWer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET TO-254AA
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch- Featu res:
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
. . . a Simple Drive Requirements
mg .power egppllee, motor controls, i.nve.rters, cho-ppers, n Ease of Paralleling
audio arylilers, high energy pelse firc.uits, ahd virtually n Hermetically Sealed
any applicatloh where high reliability Is ""yirtl The n Electrically Isolated
HEXFETtranSIstor’s totally isolated package eliminates the a Dynamic dv/dt Rating
need for additlonal iselating material between. the device a Light-weight
and the heatsink. This Improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 27.4
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 17 A
IDM Pulsed Drain Current C) 110
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current CO 27.4 A
EAR Repetitive Avalanche Energy Cf) 15.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
For footnotes refer to the last page
1
1/9/01
IRFM250
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.28 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.100 VGS = 10V, t = 17A
Resistance - - 0.105 VGS = 10V, ID = 27.4A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 9.0 - - S M 1/DS > 15V, log, = 17A ©
loss Zero Gate Voltage Drain Current - - 25 VDS= 160V ,VGs=0V
- - 250 “A VDS = 160V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 115 VGS =10V, ID = 27.4A
Qgs Gate-to-Source Charge - - 22 nC VDS = 100V
di Gate-to-Drain ('Miller') Charge - - 60
td(on) Turn-On Delay Time - - 35 VDD = 50V, ID = 44A,
tr Rise Time - - 190 VGS =10V, RG = 2.359
td(off) Turn-Off Delay Time - - 170 ns
tt FallTime - - 130
Ls + LD Total Inductance - 6.8 - nH Measuredfromdrain |ead(6mml0.25in.from
package) to source lead (6mmI0.25in. from padrage'
Ciss Input Capacitance - 3500 - VGS = 0V, VDS = 25V
Coss Output Capacitance - 700 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 110 -
CDC Drain-to-Case Capacitance - 12 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 27.4 A
ISM Pulse Source Current (Body Diode) co - - 110
VSD Diode Forward Voltage - - 1.9 V T] = 25°C, Is = 27.4A, VGS = 0V ©
trr Reverse Recovery Time - - 950 nS Tj = 25°C, IF = 27.4A, di/dt s 100/Ws
QRR Reverse Recovery Charge - - 9.0 PC VDD 3 50V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 0.83
RthJCS Case-to-Sink - 0.21 - ''CAN
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
