IRFM224B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.92A, 250V, R = 1.1Ω @V = 10 VDS(on) ..
IRFM224B ,250V N-Channel MOSFETIRFM224BNovember 2001IRFM224B250V N-Channel MOSFET
IRFM240 ,200V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
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IRFM350 ,400V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
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ISL6556ACRZ-T , Optimized Multi-Phase PWM Controller with 6-Bit DAC for VR10.X Application
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IRFM224B
250V N-Channel MOSFET
IRFM224B November 2001 IRFM224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.92A, 250V, R = 1.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D ! ! D "" !!"" S "" G! ! "" G SOT-223 ! ! IRFM Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFM224B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 0.92 A D C - Continuous (T = 70°C) 0.74 A C I (Note 1) Drain Current - Pulsed 7.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 75 mJ AS I Avalanche Current (Note 1) 0.92 A AR E (Note 1) Repetitive Avalanche Energy 0.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 2.5 W D C - Derate above 25°C 0.02 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
