IRFM214B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.64A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFM220A , Advanced Power MOSFET
IRFM220A , Advanced Power MOSFET
IRFM220B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.13A, 200V, R = 0.8Ω @V = 10 VDS(on) ..
IRFM224B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.92A, 250V, R = 1.1Ω @V = 10 VDS(on) ..
IRFM224B ,250V N-Channel MOSFETIRFM224BNovember 2001IRFM224B250V N-Channel MOSFET
ISL6554CBZ-T , Microprocessor CORE Voltage Regulator Using Multi-Phase Buck PWM Control Without Programmable Droop
ISL6556ACB ,Optimized Multi-Phase PWM Controller with 6-Bit DAC for VR10.X ApplicationISL6556A®Data Sheet March 2003 FN9096.1Optimized Multi-Phase PWM Controller
ISL6556ACR ,Optimized Multi-Phase PWM Controller with 6-Bit DAC for VR10.X ApplicationBlock DiagramPGOOD OVPVDIFF VCCRGND1.24VOVPRSPOWER-ONx1LATCHRESET (POR)ENVSENQTRI-STATESOFT STARTCL ..
ISL6556ACRZ-T , Optimized Multi-Phase PWM Controller with 6-Bit DAC for VR10.X Application
ISL6556B ,PWM Controller, 2-4 Phase, 6-Bit VID, V OUT = 0.8375 to 1.60V, ?.5% Reg, R DS (on)sensing and Internal Temp Compensation, >1MHz operation, Application = uP Core Voltage VR10.X, use with HIP6601BFeatureswith 6-Bit DAC and Programmable • Precision Multi-Phase Core Voltage RegulationInternal Tem ..
ISL6556BCB ,Optimized Multi-Phase PWM Controller with 6-Bit DAC and Programmable Internal Temperature Compensation for VR10.X ApplicationISL6556B®Data Sheet March 2003 FN9097.1Optimized Multi-Phase PWM Controller
IRFM214B
250V N-Channel MOSFET
IRFM214B November 2001 IRFM214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.64A, 250V, R = 2.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.1 nC) planar, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • Improved dv/dt capability performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D ! ! D "" !!"" S "" G! ! "" G SOT-223 ! ! IRFM Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFM214B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 0.64 A D C - Continuous (T = 70°C) 0.51 A C I (Note 1) Drain Current - Pulsed 5.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 45 mJ AS I Avalanche Current (Note 1) 0.64 A AR E (Note 1) Repetitive Avalanche Energy 0.21 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 2.1 W D C - Derate above 25°C 0.017 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Ambient * -- 60 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
