IRFM150 ,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switching . Simple Drive Requirements
power supplies and virtually any appl ..
IRFM210A , Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
IRFM210B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.77A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRFM214B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.64A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFM220A , Advanced Power MOSFET
IRFM220A , Advanced Power MOSFET
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IRFM150
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
1lNrrliEANlA"rllC3NAlL, RECTIFIER
Data Sheet No. PD-9.487C
1lii2itt
REPETITIVE AVALANCHE RATED AND dv/dt RATED
HEXFET® TTRUthiiNlSMErirCuRl
N-CHANNEL
lllitDillFliUNEiit(D
8glliNlraliiibdil,
djghliNlTDCaliNl'5Plliiiil8ibdil,
rs,hhliNlTD0fEillliNl'PEllliiibeil,
[nan RmL-tB-nSttSC3C3/EMBm
100 Volt, 0.07 Ohm HEXFET
The HEXFETO technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies and virtually any application where military
and/or high reliability is required.
Product Summary
Part Number BVDSS RDS(on) ID
IRFM150 100V 0.070 34A
FEATURES:
Cl Repetitive Avalanche Rating
Cl Isolated and Hermetically Sealed
CI Alternative to TO-3 Package
Cl Simple Drive Requirements
El Ease of Paralleling
Cl Ceramic Eyelets
CASE STYLE AND DIMENSIONS
13. 84 a12,ui!,.4,,,.,.(,,44f,,). 545)
13. 59 (o. ii7i"i'"'i'iti3i'')"
V<6_.____ 60 (o. 260)
6. 32 (o. 249)
20.32 $0.800!
20.07 (0.790)
CAUTION
BERYLLM WARNING PER MlL-8-19500
SEE PAGE l-308
'i.irmh
iSffil'esi
tinte-tcoils-),
+l.27(0.0502
I. (0. )
3.78 (0.149)
13.84(0.545) '.fl4-.%)
ir.TCir.Mr) . 1. 1"]
17 40 0685))
1 .89t0.
31.‘0[1.235[
3L35t1.1 ,
---r---- " o, .045!
iy9CicEE] t 'dl-se-ls-P/lr'. 035)
" QNil.i'F)F.r','o'ScPrict
LEGEND _ oi.tut1.tj1tLWrtr.
1 DRAIN
2 SOURCE
3 GATE
NOYES.
1 DIMENSIONING L YDLEMNCING PER ANSI V14.5M - 1982,
2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Conform: to JEDEC Outllne TO-254AA'
Dimensions in Millimeters and (Inches)
r.- 3.81 0.150
'For leadform configurations see page I-308, fig. 15
IRFliM50, JANTXV, JANTX-, 2N7224 Devices
Absolute Maximum Ratings
Parameter IRFM150, JANTXV, JANTX-, 2N7224 Units
ID © Vias " IW, TC " 25°C Continuous Drain Current 34
ID © VGS " ttN, Tc " 100°C Continuous Drain Current 21 A
IDM Pulsed Drain Cunem (i) 136
PD @ Tc " 25°C Max. Power Dissipation 150 w
Linear Deratlng Factor 1.2 WM ©
VGS Gattr.to.Source Vonago 120 V
EAS Single Pulse Avalanche Energy © (809133;. 12) m
'AR Avalanche Current (i) 34 A
(See EAR)
EAR Repetitive Avalanche Energy (i) (See :39. 13) ml
tht/ttt Peak Diode Recovery dvldt © " Vlns
(See Fig. 13)
T J Operating Junction -55 to 150
rsm Storage Temperature Range 'C
Lead Temperature 300 (0063 in, (15 mm) from case for 10s)
Weight M (typical) g
Electrical Characteristics' a Tg =
25''C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Vottage 100 - - V VGS " tht, ID - " mA
ABVDSS/ATJ Temperature Coefficient of - 0.13 - VI°C Reference to 2tPC, ID " 1.0 mA
Breakdown Voltage
R Static Drain-to-Source - - 0.07 V " 10V. I " 21A
DS(on) On-State Resistance n -..vGs"'''_v"D"5'.t'.., G)
- - M81 VGS " ItN, ID - 34A
Vasith) Gate Threshold Voltage 2.0 - " V VDS - Ves. ID " 250 “A
gts Forward Trartsetmductantttt 9.0 - - S (B) v05 2 15V, IDS - 21A G)
IDSS Zeto Gate Vonage Drain Current - - 25 VDS " M x Max. Rating, vas " (N
- - 250 " v03 - os x Max. Rating
VGs " thtTg " 125°C
Kass Gate-to-Source Leakage Forward - - 100 nA Vas - 20V
Kass Gate-to-Source Leakage Reverse - - Moo VGS " -2tht
th, Total Gate Charge 50 - 125 VGS - ItN, ID " 34A
Ars Gate-to-Source Charge 8 - 22 n0 V03 - M x Max. Rating
09d atte4o.Drain ("MIMr'') Charge 15 - 65 See Fig. 6 and 14
tdion) Tum-On Delay Time - - 35' V00 " 50V, ID " 34A, Re - 2.350
tr Rise Time - - 190
taott) Turn-Off Delay Time " - - 170 Sea Fig. 11
tt Fall Time - - 130
LD Internal Drain Inductance - " - Measured from the drain Modified MOSFET symbol
lead, 6 mm (0.25 In. from showing the Internal
nH package to center die. lnductancos.
Ls Intomal Source Inductance - " - Measured trom the
source lead. 6 mm (0.25
in.) from package to
source bonding pad.
Cm Input Capacitance - 3700 - VGS " w, VDS - 25V
Coos Output Capacitance - 1100 - pF t " 1.0 MHz
Cras Reverse Transfer Capacitance - 200 - See Fig. 5
CDC DntlrrttAhgae Capacitance - 12 -
