IRFM140 ,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageData Sheet No. PD-9.4860
INTERNATIONAL RECTIFIER
REPETITIVE AVALANCHE RATED AND dv/dt RATED
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IRFM140-JANTXV2N7218
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
lllNlr'iriEilAllihlLhT'lletliNLhlL, AllECy'irlllrllllElq
Dita Sheet No. PD-9.48GC
REPETITIVE AVALANCHE RATED AND dv/dt RATED
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(REF: NML-Sr''MiiMSCMlt/E5S+
100 Volt, 0.077 Ohm HEXFET
The HEXFET0 technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies and virtually any application where military
and/or high reliability is required.
Product Summary
Part Number BVDSS RDS(on) ID
IRFM140 100V 0.077ft 28A
FEATURES:
Cl Repetitive Avalanche Rating
Cl Isolated and Hermetically Sealed
U Alternative to TO-3 Package
Cl Simple Drive Requirements
Cl Ease of Paralleling
Cl Ceramic Eyelets
CASE STYLE AND DIMENSIONS
13.84 (0.545)
13.59 (0.535)
.,,,,j,i,.,s,.,,.,,e, (0.260)
6.32 (0.249)
20.07 (0.790)
CAUTION
BERYLLIA 1#Mfllht) PER MlL-S-ISSOU
SEE PAGE l-3OD
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- 1.14 0.045
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LEGEND
2 500111;:
a GATE
.NOYES:
1 DEMENSIONING ' TOLERANGNG Mt ANSI YILSM - 1962.
2 ALL DIMENSIONS ARE SHOWN IN MILUMETERS (INCHES).
Conforms to JEDEC Outline TO-‘ZSAAA'
Dimensions In Millimeters and (Inches)
'For Ieadfon'n configurations see page I-300, fig. 15
IRFM140, JANTXV, JANTX-, 2N7218 Devices
Absolute Maximum Ratings
Parameter IRFMMO. JANTXV, JANTX-. 2N7218 Units
ID @ VGS = 10V, T3 --. 25°C Continuous Drain Current 28
ID @ vas - 10v, Tc - 100°C Continuous Drain Current 20 A
IDM Pulsed Drain Current to 112
PD © Tc " 25°C Max. Power Dissipation 125 w
Linear Deraung Factor 1.0 WIK ©
Iltas thrttrto.Stturety Voltage‘ t20 V
E Sin Ie Pulse Avalanche Energy © 250 md
AS g (See Fig. 12)
'AR Avalanche Current co 28 A
(Sets EAR)
E as tlthm Avalanche Energy co 125 m,1
AR pe (See Fig. 13)
dvldl Peak Diode Recovery thtlttt G) 5.5 _ Wns
(See Fig. 13)
Tg Operating Junction m-55 to 150
TSTG Storage Temperature Range I
Lead Temperature 300 (0063 in. (1.6 mm) from case for IOS)
Weight M (typical) g
Electrical Characteristics a Tg = 25°c (Unlm Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS DralmttrSottrmt Breakdown Voltage 100 - - V VGS - tN, ID " 1.0 mA
ABVDSSIATJ Temperature Coetfit%nt of - 0.13 - VPC Reference to 25°C, ID - 1.0 mA
Breakdown Vonage
R Static Drain-to-Source - - 0.077 V = IW, ID = 20A
DS(on) On-State Resistance ll GS co
- - 0.125 vas '. IW, ID " AM
V3501.) Gate Threshold Voltage 2.0 - 4.0 V V05 = Veg. ID = 250 [A
93 Forward Trttnttamduetanett 9.1 - - s to) vos 2 IW, IDS = 20A ©
'DSS Zero Gate Voltage Drain Current - - 25 Vos = M x Max. Rating, VGS = W
- - 250 " vos " M x Max. Rating
vas " 0V, Tg = 125°C
less t3attr-to-Sourtat Leakage Forward - - 100 nA vas - 20V
'GSS GattFteStturtN, Leakage Reverse - - M00 vas '* -20V
% Total Gate Charge 30 - 59 Vias - 10V, ID " 28A
tags t3ttttFttFSourtttt Charge 2.4 - 12 " V08 " os' x Max. Rating
AN Gate-to-Draln (''Miller'0 Charge 12 - 301 See Fig. 6 and 14
tttton) mrn-On Delay Time - - 21 VDD " 50V. ID " 20A, Re " tMil
tr Rise Time - - 145
td(am mrn-Olf Delay Time - - 64 See Fig. 11
tt Fall Tlmo - - 105
LD Internal Drain Inductance - " - Measured from the draln Modltled MOSFET symbol
lead. 6 mm (0.25 In.) from showing the Internal
nH package to center 0 die. Inductancea.
Ls Internal Source Inductance - " - Measured from the
source lead, 6 mm (0.25
in.) from package to
source bonding pad.
Ciss Input Capacitance - 1660 - VGS " ov, Vos " 25V
Goss Output Capacitance - 550 - pF t = 1.0 MHz
Crss Reverse Transfer Capacltanco - 120 - See Fig. 5
CDC Draln-to-Case Capacitance - 12 -
