IRFL4315TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package IRFL4315PbFHEXFET Power MOSFETV R max I
IRFL4315TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageApplicationsDSS DS(on) D High frequency DC-DC converters150V 185m@V = 10V 2.6AGSBenefits Low Gat ..
IRFL9014 ,-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 90863AIRFL9014®HEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DV = -60VDSSl Dyna ..
IRFL9014. ,-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 90863AIRFL9014®HEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DV = -60VDSSl Dyna ..
IRFL9014PBF , HEXFET® Power MOSFET
IRFL9014TR ,-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 90863AIRFL9014®HEXFET Power MOSFETl Surface Mountl Available in Tape & Reel DV = -60VDSSl Dyna ..
ISL6548ACRZA-T , ACPI Regulator/Controller for Dual Channel DDR Memory Systems
ISL6548ACRZ-T , ACPI Regulator/Controller for Dual Channel DDR Memory Systems
ISL6549 ,Single 12V Input Supply Dual RegulatorApplicationsThe ISL6549 is available in a 14 Ld SOIC package, •Processor and memory supplies16 Ld Q ..
ISL6549IBZ , Single 12V Input Supply Dual Regulator Synchronous Rectified Buck PWM and Linear Power Controller
ISL6550 ,Voltage Monitor and Supervisor, Output 0.8 to 5V via 5-Bit DAC, 3 Logic Options, 5V Ref, Prog UV and OV, Use with ISL6551Block Diagram for • Programmable DAC Range, within 0.8–5.0Vreference.• Programmable undervoltage an ..
ISL6550AIB ,SAM Supervisor And MonitorApplicationsis monitored and compared with BDAC; an error band is established via the R4 and R5 res ..
IRFL4315TRPBF
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
TOR. Rectifier
Applications
o High frequency DC-DC converters
Benefits
0 Low Gate to Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
PD - 95258A
llRFL4315PbF
HEXFET© Power MOSFET
RDS(on) max
185mf2@Vas = 10V
o Fully Characterized Avalanche Voltage SOT-223
and Current
q Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25°C Continuous Drain Current, Vas @ 10V 2.6
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 2.1 A
IDM Pulsed Drain Current C) 21
PD @TA = 25°C Power Dissipation© 2.8 W
Linear Derating Factor 0.02 W/°C
l/es Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 6.3 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient (PCB Mount, steady state)@ - 45 °C/W
Notes (O through © are on page 8
1
09/22/10
IRFL4315PbF
International
TOR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DS$ Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250PA
AV(BR)DS$/ATJ Breakdown Voltage Temp. Coefficient - 0.19 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 185 mf2 Vas = 10V, ID = 1.6A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.0 V Vos = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vos = 150V, l/ss = 0V
- - 250 Vos = 120V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 3.5 - - S VDS = 50V, ID = 1.6A
09 Total Gate Charge - 12 19 ID = 1.6A
Qgs Gate-to-Source Charge - 2.1 3.1 no Vos = 120V
di Gate-to-Drain ("Miller") Charge - 6.8 10 Vss = 10V
td(on) Turn-On Delay Time - 8.4 - l/oo = 75V
t, Rise Time - 21 - ns ID = 1.6A
td(off) Turn-Off Delay Time - 20 - Rs = 159
ff Fall Time - 19 - Vas = 10V ©
Ciss Input Capacitance - 420 - Vas = 0V
Coss Output Capacitance - 100 - Vos = 25V
Crss Reverse Transfer Capacitance - 25 - pF f = 1.0MHz
Coss Output Capacitance - 720 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 48 - Vss = 0V, VDs = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 98 - Vas = 0V, VDs = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 38 mJ
IAR Avalanche CurrentCD - 3.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 2 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 21 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V Tu = 25°C, ls = 2.1A, VGS = 0V ©
trr Reverse Recovery Time - 61 91 ns Tu = 25°C, IF = 1.6A
arr Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps ©
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