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IRFL4310-IRFL4310TR
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD - 91368B
International
Tart, Rectifier RFL431O
HEXFET® Power MOSFET
Surface Mount VDSS = 100V
Dynamic dv/dt Rating
Fast Switching =
Ease of Paralleling ' " RDS(on) 0200
Advanced Process Technology
Ultra Low On-Resistance ID = 1.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick- SOT 223
and-place as with other SOT or SOIC packages but has -
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OW is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID tt TA = 25°C Continuous Drain Current, Veg @ 10V** 2.2
ID @ TA = 25°C Continuous Drain Current, V65 @ 10V* 1.6 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
IDM Pulsed Drain Current CO 13
PD @TA = 25''C Power Dissipation (PCB Mount)" 2.1 W
Pro @TA = 25''C Power Dissipation (PCB Mount)' 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Vss Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 47 mJ
IAR Avalanche Currents 1.6 A
EAR Repetitive Avalanche EnergyO* 0.10 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TU,TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Typ. Max. Units
Ras Junction-to-Amt). (PCB Mount, steady state)' 93 120 o C AIV
ReJA Junction-to-Amb. (PCB Mount, steady state)" 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
5/11/99
IRFL4310 International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V N/ss = 0V, ID = 250pA
AV(BR)D55IATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/''C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source/sis/e - - 0.20 C2 VGS = 10V, ID = 1.6A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
gfs Forward Transconductance 1.5 - - S Vos = 50V, ID = 0.80 A
IDSS Drain-to-Source Leakage Current - - 25 pA Vos = 100V, Vss = 0V
- - 250 I/ns = 80V, Vcs = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qa Total Gate Charge - 17 25 ID = 1.6A
Qas Gate-to-Source Charge - 2.1 3.1 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 7.8 12 VGS = 10V, See Fig. 6 and 13 (9
td(on) Turn-On Delay Time - 7.8 - VDD = 50V
tr RiseTime - 18 - ns ID = 1.6A
tdm) Turn-Off Delay Time - 34 - RG = 6.2 C2
tf Fall Time - 20 - RD = 31 C2, See Fig. 10 ©
Ciss Input Capacitance - 330 - Ves = 0V
Coss Output Capacitance - 92 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - OSI showing the
ISM Pulsed Source Current 13 A integral reverse G
(Body Diode) CD - - p-njunction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 1.6A, VGS = 0V (9
tr, Reverse Recovery Time - 72 110 ns Tu = 25°C, IF = 1.6A
Qrr Reverse RecoveryCharge - 210 320 nC di/dt = 1OOA/ps ©
Notes:
(O Repetitive rating; pulse width limited by G) ISD s 1.6A, di/dt f 340A/ps, VDD f V(BR)DSS:
max.junction temperature. ( See fig. 11 ) Trs 150°C
®VDD = 25V, starting To = 25°C, L = 9.2 mH
Rs = 259, IAS-- 3.2A. (See Figure 12) co Pulse width f 300ps; duty cycle f 2%.
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