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IRFL4105TRPBF
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
zaRiectifier
PD-95319
RF -4105PbF
HEXFET© Power MOSFET
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
VDSS = 55V
RDS(on) = 0.045Q
ID = 3.7A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely ethcient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1 .OW
is possible in a typical surface mount application.
Absolute Maximum Ratings
SOT-223
Parameter
Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V**
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V*
ID @ TA = 70°C Continuous Drain Current, VGs © 10V*
IDM Pulsed Drain Current co
PD @TA = 25°C Power Dissipation (PCB Mount)"
Po @TA = 25°C Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
8.3 mW/°C
Vss Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy©
110 mJ
IAR Avalanche Current©
EAR Repetitive Avalanche Energyc0
0.10 mJ
dv/dt Peak Diode Recovery dv/dt ©
5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range
-55 to + 150 ''C
Thermal Resistance
Parameter
Max. Units
Junction-to-Amb. (PCB Mount, steady state)'
120 °C/W
Junction-to-Amb. (PCB Mount, steady state)"
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, tor comparison with other SMD devices.
05/25/04
IRFL4105PbF
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient -..- 0.058 .-..-.- V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.045 Q VGS = 10V, ID = 3.7A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGs, ID = 250PA
Ts Forward Transconductance 3.8 - - S Ws = 25V, ID = 1.9A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - 23 35 ID = 3.7A
Qgs Gate-to-Source Charge - 3.4 5.1 nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - 9.8 15 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.1 - VDD = 28V
tr Rise Time - 12 - ID = 3.7A
tdom Turn-Off Delay Time - 19 - ns Rs = 6.09
tf Fall Time - 12 - RD = 7.59, See Fig. 10 ©
Ciss Input Capacitance - 660 - Vss = 0V
Coss Output Capacitance - 230 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 99 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) co - - 30 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25''C, Is = 3.7A, N/ss = 0V ©
trr Reverse Recovery Time - 55 82 ns To = 25''C, IF = 3.7A
Qrr Reverse RecoveryCharge - 120 170 nC di/dt = 100A/ps ©
Notes:
© Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting To = 25°C, L = 16mH
Rs = 25Q, IAS-- 3.7A. (See Figure 12)
© ISD S 3.7A, di/dt S 110/Vps, VDD S V(BR)DSS!
T J 3 150°C
© Pulse width S 300ps; duty cycle S 2%.
