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IRFL4105-IRFL4105TR
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
zaRiectifier
Description
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
PD- 91381A
|RFL4105
HEXFET© Power MOSFET
VDSS = 55V
RDS(on) = 0.0459
ID = 3.7A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1 .OW
is possible in a typical surface mount application.
Absolute Maximum Ratings
SOT-223
Parameter
Max. Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V**
ID @ TA = 25°C
Continuous Drain Current, l/ss @ 10V*
ID @ TA = 70''C
Continuous Drain Current, VGS © 10V*
Pulsed Drain Current co
PD @TA = 25°C
Power Dissipation (PCB Mount)"
Po @TA = 25°C
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
8. 3 mW/°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©
110 mJ
Avalanche Current0)
Repetitive Avalanche Energy0)
0.10 mJ
Peak Diode Recovery dv/dt ©
5.0 V/ns
Tu, TSTG
Junction and Storage Temperature Range
-55 to + 150 DC
Thermal Resistance
Parameter
Max. Units
Junction-to-Amb. (PCB Mount, steady state)'
120 °C/W
Junction-to-Amb. (PCB Mount, steady state)"
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1/14/99
IRFL4105
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Was = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient _.-. 0.058 .-..-.- V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.045 n VGS = 10V, ID = 3.7A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGs, ID = 250pA
Ts Forward Transconductance 3.8 - - S Ws = 25V, ID = 1.9A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - 23 35 ID = 3.7A
Qgs Gate-to-Source Charge - 3.4 5.1 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 9.8 15 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.1 - VDD = 28V
tr Rise Time - 12 - ID = 3.7A
tdom Turn-Off Delay Time - 19 - ns Rs = 6.09
tf Fall Time - 12 - RD = T.50, See Fig. 10 ©
Ciss Input Capacitance - 660 - Vss = 0V
Coss Output Capacitance - 230 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 99 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 30 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25''C, Is = 3.7A, N/ss = 0V ©
trr Reverse Recovery Time - 55 82 ns To = 25°C, IF = 3.7A
Qrr Reverse RecoveryCharge - 120 170 nC di/dt = 100A/ps (9
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Rr 11 )
© Vroro = 25V,starting To = 25°C, L = 16mH
Rs = 259. IAS-- 3.7A. (See Figure 12)
© ISD I 3.7A, di/dt S 110Alps, VDD S V(BR)DSS!
T J 3 150°C
© Pulse width 5 300ps; duty cycle 3 2%.
