IRFL210TRPBF , Power MOSFET
IRFL214 ,250V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageInternational
TOR
Rectifier
PD-9.862
IRFL214
HEXFETO Power MOSFET
. Surface Mount ..
IRFL214TR ,250V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageInternational
TOR
Rectifier
PD-9.862
IRFL214
HEXFETO Power MOSFET
. Surface Mount ..
IRFL214TRPBF , Power MOSFET
IRFL214TRPBF , Power MOSFET
IRFL4105 ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
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IRFL210-IRFL210TR
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
international
149R Rectifier
HEXFET® Power MOSFET
o Surface Mount
o Available in Tape & Reel
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o Fast Switching
o Ease of Paralleling
tt Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.868
IRFL21O
on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase,
infra red, or wave soldering techniques. Its unique package design allows for
easy automatic pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due to an enlarged
tab for heatsinking. Power dissipation of greater than 1.25W is possible in a
typical surface mount application.
Absolute Maximum Ratings
SOT-223
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, I/ss @ 10 V 0.96
In @ To = 100°C Continuous Drain Current, Vas © 10 V 0.60 A
IDM Pulsed Drain Current C) 7.7
PD © To = 25°C Power Dissipation 3.1 W
PD © TA = 25°C Power Dissipation (PCB Mount)" 2.0
Linear Derating Factor 0.025 W PC
Linear Derating Factor (PCB Mount)" 0.017
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 50 mJ
IAR Avalanche Current C) 0.96 A
EAR Repetitive Avalanche Energy Cf) 0.31 mJ
dv/dt Peak Diode Recovery dv/dt (B) 5.0 V/ns
To, Tsm Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Thermal Resistance
1 ( Parameter Min. Typ. T Max. Units
Reuc ! Junction-to-PCB - - 40
' . °C/W
Ram juuruotion-to-Ambient (PCB mount)" - - l 60
** When mounted on 1" square PCB (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFL210
Electrical Characteristics a Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max, Units Test Conditions
V(BRmss Drain-to-Source Breakdown Voltage 200 - - V VGs=0V, ID: 25OWA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - V/°C Reference to 25°C, lo: 1mA
Rtosion) Static Drain-to-Source On-Resistance - - 1.5 I n VGs=10V, |n=0.58A C9
Vegan) Gate Threshold Voltage 2.0 - 4.0 V N/oval/ss, ID: 250PA
gfs Forward Transconductance 0.51 - - S Vos=50V. 1020.58A ©
loss Drain-to-Source Leakage Current -Ci, - 25 WA Vos=200V, Var-UN
- - 250 Vos=160V, VGs=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=2OV 4
Gate-to-Source Reverse Leakage - - -100 [ 'gtsss---2tN
Qg Total Gate Charge - - 8.2 ID=3.3A
Qgs Gate-to-Source Charge -- - 1.8 " Vos=160V
di Gate-to-Drain ("Miller") Charge - - 4.5 Ves=1OV See Fig. 6 and 13 ©
two”) Turn-On Delay Time - 8.2 - Voo=100V
tr Rise Time - 17 - ns lo=3.3A
td[off) Turn-Off Delay Time - 14 - Rs=24§2
tr Fall Time - 8.9 - RD=30£2 See Figure 10 ©
Lo Internal Drain Inductance . - 4.0 - g $12358 2/nd. ') D
. % nH from package G
Ls Internal Source Inductance - 6.0 - Ind center df
--.-- ___-_2.. die contact s
Ciss Input Capacitance I’~ 140 - VGs=OV
Coss Output Capacitance l - 53 - pF Vos= 25V
Crss Reverse Transfer Capacitance I - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter ____,ryi_r.n, Typ. Max. Units Test Conditions
ls Continuous Source Current 1 - - 0.96 MOSFET symbol D
(Body Diode) ' A showing the bt
ISM Pulsed Source Current - - 7.7 integral reverse G
(Body Diode) C) __2_2.._h_2 p-n junction diode. S
Vso Diode Forward Voltage - - 2.0 V l TJ=25°C, |s=0.96A, VGs=OV ©
tn Reverse Recovery Time - 150 310 ns To--25t, IF=3.3A
er Reverse Recovery Charge - 0.60 1.4 wc di/dt=100A/ws ©
ton Forward Turn-On Time Intrinsic tylron time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=81mH
RG=25§2, IAs=O.96A (See Figure 12)
© ISDSBGA, di/de70A/ys, VDoSVaaRpss,
TJS150°C
© Pulse width 5 300 us: duty cycle 32%.
