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IRFL024
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
International
:rartR3ctifier
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety ofapplications.
The SOT-223 package is designed for surface-mount
using vaporphase, infra red, orwave soldering techniques.
PD - 91861A
RFL024N
HEXFET® Power MOSFET
VDSS = 55V
A RDS(on) = 00759
ID = 2.8A
Its unique package design allows for easy automatic pick- s O T Al 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V** 4.0
In @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8 A
In © TA = 70°C Continuous Drain Current, Vss @ 10V* 2.3
IDM Pulsed Drain Current © 11.2
Po @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Po @TA = 25°C Power Dissipation (PCB Mount)' 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 214 mJ
IAR Avalanche Current0) 2.8 A
EAR Repetitive Avalanche EnergyO* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)' 90 120 a C NV
ReJA Junction-to-Amb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
6/15/99
IRFL024N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - -- V VGS = 0V, ID = 250pA
AV(BRpss/ATo Breakdown Voltage Temp. Coemcient - 0.056 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.075 Q VGS = 10V, ID = 2.8A ©
VGsm Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
9ts Forward Transconductance 3.0 - - S VDS = 25V, ID = 1.68A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 55V, VGS = 0V
- - 250 Vos = 44V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/cs = -20V
% Total Gate Charge - - 18.3 ID = 1.68A
Qgs Gate-to-Source Charge - - 3.0 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 7.7 VGS = 10V, See Fig. 6 and 9 (4D
tdmn) Turn-On Delay Time - 8.1 - VDD = 28V
tr Rise Time - 13.4 - ns ID = 1.68A
tam) Turn-Off Delay Time - 22.2 - Rs = 249
tr Fall Time - 17.7 - RD = 179, See Fig. 10 co
Ciss Input Capacitance - 400 - VGS = 0V
C055 Output Capacitance - 145 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 60 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 2.8 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 11.2 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls =1.68A, I/ss = 0V CO
trr Reverse Recovery Time - 35 53 ns TJ = 25°C, IF = 1.68A
Qrr Reverse RecoveryCharge - 50 75 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Starting To= 25°C, L = 54.7 mH
Rs = 259, bus-- 2.8A. (See Figure 12)
TJs150°C
© ISD s: 1.68A, di/dt s 155A/ps, vDD s V(BRmss.
© Pulse width I 300ps; duty cycle s: 2%.
