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IRFL014 N-IRFL014N-IRFL014NTR
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD- 92003A
International
TOR Reciiiier FLO14N
HEXFET© Power MOSFET
Surface Mount D
Advanced Process Technology VDSS = 55V
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching G
Fully Avalanche Rated ID = 1 9A
A RDS(on) = 0.169
Description
Fifth Generation HEXFET® MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFETO power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety ofapplications.
The SOT-223 package is designed for surface-mount
using vaporphase, infrared, orwave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has SOT-223
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 2.7
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.9 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.5
IDM Pulsed Drain Current C) 15
Pro @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
Pro @TA = 25''C Power Dissipation (PCB Mount)* 1.0 W
Linear Derating Factor (PCB Mount)' 8.3 mW/°C
VGs Gate-to-Source Voltage 1 20 V
EAs Single Pulse Avalanche Energy© 48 mJ
IAR Avalanche Current0) 1.7 A
EAR Repetitive Avalanche Energyc0* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
RNA Junction-to-NM. (PCB Mount, steady state)' 90 120 o C AN
RNA Junction-to-Amb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
1/19/00
|RFLO14N
International
IDR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.054 .-..-.- V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.16 n VGS = 10V, ID = 1.9A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGs, ID = 250PA
Ts Forward Transconductance 1.6 - - S Ws = 25V, ID = 0.85A
loss Drain-to-Source Leakage Current - - 1.0 pA Vros = 44V, VGS = 0V
- - 25 Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - 7.0 11 ID = 1.7A
Qgs Gate-to-Source Charge - 1.2 1.8 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - 3.3 5.0 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 6.6 - VDD = 28V
tr Rise Time - 7.1 - ID = 1.7A
tdom Turn-Off Delay Time - 12 - ns Rs = 6.09
tf Fall Time - 3.3 - RD = 169, See Fig. 10 Cl)
Ciss Input Capacitance - 190 - Vss = 0V
Coss Output Capacitance - 72 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 33 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.3 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 15 p-n junction diode. s
VSD Diode Forward Voltage - - 1.0 V To = 25''C, Is = 1.7A, VGS = 0V ©
trr Reverse Recovery Time - 41 61 ns To = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge - 64 95 nC di/dt = 100A/us ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 8.2mH
Rs = 259, IAS-- 3.4A. (See Figure 12)
© la, S 1.7A, di/dt S 250A/ps, VDD I V(BR)DSS'
T J 5 150°C
© Pulse width f 300ps; duty cycle f 2%.
