IRFK4J350+ ,ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATIONapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
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Absolute Maximum Rating
Parameter Max. Units
ID © TC=25°C Continuous Drain Current ..
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Absolute Maximum Rating
5 Parameter Max. Units
b © TC=25°C Continuous Drain Cu ..
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q Surface Mount
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IRFK4J350+
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION
internationai
1:212 Rectifier
Bulletin E27106
IRFK4H350,IRFK4J35O
Isolated Base Power HEx-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEX-pakTM utilises the well-proven HEXFETTM die, combining
low on-state resistance with high transconductance. These superior
technology die are assembled by state of the art techniques into the
TO-240 package, featuring 2.5kV rms isolation and solid M5 screw
connections. The small footprint means the package is highly suited to
power applications where space is a premium. Available in two
versions, iRFK.H... for fast switching and lRFK.J... for oscillation
sensitive applications.
Absolute Maximum Rating
ID = 50A
rParameter Max.
to © TC=25°C Continuous Drain Current 50
i0 © Tc--100oC Continuous Drain Current ---, 32
V Pulse Drain Current 200 A C)
Po © TC=25°C Maximum Power Dissipation 500 W
vas Gate-to-Sourcm 20 V "
VINS R.M.S. Isolation Voltage, circuit to base 2.5 W
T J Operating Junction Temperature Range -40 to 150 oo
TSTG rStorage Temperature Range -40 to 150 00
Thermal and Mechanical Specifications
Parameter Min. Typ. Max. Units
Rmuc Junction-to-Case - - 0.25 W Q)
ng -cGatTats'GGtG' greased surface Jr-lr--" - K/W
T Mounting Torque +10% ©
HEXpak to Heatsink 5 I Nm t
_ Busbar to HEXpak 3 l Nm '
V“ m_jpproximate Weight 140 Tr--
5 - r "oz" -
Notes:
Ci) - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
Cr) - Per Module.
© - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK4H350,lRFK4J350
Electrical Characteristics o T J = 25°C (Unless otherwise speclfled)
_ - - - Parameter Min. Typ. Max. Units Test Conditions
Bvoss Drain-to-Source Breakdown 400 - - V VGs-OV, 10:1.0mA
voltage
RDS(on) Static Drain-to-Source - 63 75 mn VGS=10V, ID=16A
On-State Resistance - --.-
low“) On-State Drain Current 50 - - A Vos > low”) x Rosmmmax,
VGSUh) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, |D=1.0mA "
T,,, Forward Transconductance © 32 50 - S Vos > 50V, ID=32A
bss Zero Gate Voltage Drain Current 1.0 mA VDS=VDSmax, VGS=0v
- - 4.0 mA VGS=10V, Tc=125°C,
l, VDS=VDSmax x 0.8
ksss Gate-to-Source Leakage Forward - 400 nA Vss--20V
lass Gate-to-Source Leakage Reverse - -400 M l VGS=-20V
09 Total Gate Charge 400 550 nC ' b=50A, Vss=10V,
Clgs J Gate-to-Source Charge 60 80 n0 VDS=VDSmax x 0.8
di Gate-to-Drain ("Miller") Charge . _ - _1_73_ 250 nC
tdon) :I Tum-on Delay Time IRFK4H350 50 l - ns VDD=180V. ID=32A,
, IRFK4J350 60 l - ns
t, I Rise Time IRFK4H350 55 ns VGS=10V,
l IRFK4J350 W _ 70 - ns ,
td(om Tum-off Delay Time IRFK4H350 230 - _-e-y-ls-, Rsouncs--3.3n
l IRFK4J350 - 300 - ns
tt Fall Time I IRFK4H350 - 50 - ns
', IRFK4J350 - 70 .. ns
Tos Drain-to-Source Inductance - I 18 _ nH
Ciss Input Capacitance .. f 17.5 - I nF VGS=0V, VDS=25V,
Cos, Output Capacitance d 1 1.2 _ -, nF i=1 .OMHz
crs; - -ie%ru, ir-ar-oss-tarea-Pia/if _ . - - - - i - - - Eafo" - C-- nF
Linear Derating Factor l 4 W/K
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 50 A
(Body Diode)
ISM Pulsed Source Current - - 190 A f I
(Body Diode)
LVEP, Diode Forward Voltage _ _ 1.6 V VGS=0V. IS: 50A, Tc=25°C
trr Reverse Recovery Time 180 400 880 ns di/dt=400A/ps, T J=1 50°C
A, Reverse Recovered Charge 8.0 20.0 I 52.0 wc IS=50A
Notes:
© - Pulse Width K 300ps: Duty cycle 3 2%.
