IRFK4H350 ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27106
International
TOR Rectifier IRFK4H350,lRFK4J350
Isolated Base Power HEX-pakT ..
IRFK4H350+ ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
IRFK4H450 ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27107
International
TOR Rectifier IRFK4H450,lRFK4J450
Isolated Base Power HEX-pakT ..
IRFK4H450+ ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. T Units
b @ TC=25°C Continuous Drain Cu ..
IRFK4J350+ ,ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATIONapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
IRFK6H150 ,100V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. Units
ID © TC=25°C Continuous Drain Current ..
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ISL6535IRZ , Synchronous Buck Pulse-Width Modulator PWM Controller
ISL6536AIB ,Four Channel Supervisory ICApplicationsvalid on all four rails. Subsequently when the monitored • Graphics Cardsvoltage on any ..
ISL6536IB ,Four Channel Supervisory ICApplicationsmonitor (VMON) inputs are satisfied the PGOOD output will be immediately released to go ..
ISL6536IB ,Four Channel Supervisory ICFeaturesThe ISL6536 is a four channel supervisory IC designed to • Adjustable undervoltage lockout ..
IRFK4H350-IRFK4H350+
400V SINGLE HEXFET Power MOSFET in a TO-240AA package
internationai
1:212 Rectifier
Bulletin E27106
IRFK4H350,IRFK4J35O
Isolated Base Power HEx-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEX-pakTM utilises the well-proven HEXFETTM die, combining
low on-state resistance with high transconductance. These superior
technology die are assembled by state of the art techniques into the
TO-240 package, featuring 2.5kV rms isolation and solid M5 screw
connections. The small footprint means the package is highly suited to
power applications where space is a premium. Available in two
versions, iRFK.H... for fast switching and lRFK.J... for oscillation
sensitive applications.
Absolute Maximum Rating
ID = 50A
rParameter Max.
to © TC=25°C Continuous Drain Current 50
i0 © Tc--100oC Continuous Drain Current ---, 32
V Pulse Drain Current 200 A C)
Po © TC=25°C Maximum Power Dissipation 500 W
vas Gate-to-Sourcm 20 V "
VINS R.M.S. Isolation Voltage, circuit to base 2.5 W
T J Operating Junction Temperature Range -40 to 150 oo
TSTG rStorage Temperature Range -40 to 150 00
Thermal and Mechanical Specifications
Parameter Min. Typ. Max. Units
Rmuc Junction-to-Case - - 0.25 W Q)
ng -cGatTats'GGtG' greased surface Jr-lr--" - K/W
T Mounting Torque +10% ©
HEXpak to Heatsink 5 I Nm t
_ Busbar to HEXpak 3 l Nm '
V“ m_jpproximate Weight 140 Tr--
5 - r "oz" -
Notes:
Ci) - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
Cr) - Per Module.
© - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK4H350,lRFK4J350
Electrical Characteristics o T J = 25°C (Unless otherwise speclfled)
_ - - - Parameter Min. Typ. Max. Units Test Conditions
Bvoss Drain-to-Source Breakdown 400 - - V VGs-OV, 10:1.0mA
voltage
RDS(on) Static Drain-to-Source - 63 75 mn VGS=10V, ID=16A
On-State Resistance - --.-
low“) On-State Drain Current 50 - - A Vos > low”) x Rosmmmax,
VGSUh) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, |D=1.0mA "
T,,, Forward Transconductance © 32 50 - S Vos > 50V, ID=32A
bss Zero Gate Voltage Drain Current 1.0 mA VDS=VDSmax, VGS=0v
- - 4.0 mA VGS=10V, Tc=125°C,
l, VDS=VDSmax x 0.8
ksss Gate-to-Source Leakage Forward - 400 nA Vss--20V
lass Gate-to-Source Leakage Reverse - -400 M l VGS=-20V
09 Total Gate Charge 400 550 nC ' b=50A, Vss=10V,
Clgs J Gate-to-Source Charge 60 80 n0 VDS=VDSmax x 0.8
di Gate-to-Drain ("Miller") Charge . _ - _1_73_ 250 nC
tdon) :I Tum-on Delay Time IRFK4H350 50 l - ns VDD=180V. ID=32A,
, IRFK4J350 60 l - ns
t, I Rise Time IRFK4H350 55 ns VGS=10V,
l IRFK4J350 W _ 70 - ns ,
td(om Tum-off Delay Time IRFK4H350 230 - _-e-y-ls-, Rsouncs--3.3n
l IRFK4J350 - 300 - ns
tt Fall Time I IRFK4H350 - 50 - ns
', IRFK4J350 - 70 .. ns
Tos Drain-to-Source Inductance - I 18 _ nH
Ciss Input Capacitance .. f 17.5 - I nF VGS=0V, VDS=25V,
Cos, Output Capacitance d 1 1.2 _ -, nF i=1 .OMHz
crs; - -ie%ru, ir-ar-oss-tarea-Pia/if _ . - - - - i - - - Eafo" - C-- nF
Linear Derating Factor l 4 W/K
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 50 A
(Body Diode)
ISM Pulsed Source Current - - 190 A f I
(Body Diode)
LVEP, Diode Forward Voltage _ _ 1.6 V VGS=0V. IS: 50A, Tc=25°C
trr Reverse Recovery Time 180 400 880 ns di/dt=400A/ps, T J=1 50°C
A, Reverse Recovered Charge 8.0 20.0 I 52.0 wc IS=50A
Notes:
© - Pulse Width K 300ps: Duty cycle 3 2%.
