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IRFIZ48V-IRFIZ48VPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-94072
IRFIZ48V
HEXFET® Power MOSFET
International
TOR, Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Fast Switching G
Fully Avalanche Rated
o Optimized for SMPS Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
VDSS = 60V
RDS(on) = 12mQ
ID = 39A
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a lowthermal resistance between the tab and
external heatsink. This isolation is equivalentto using a 100 TO-220 FULLPAK
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 39
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 27 A
IDM Pulsed Drain Current COO) 290
Po @Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 W/°C
Vss Gate-to-Source Voltage , 20 V
IAR Avalanche CurrentC0© 72 A
EAR Repetitive Avalanche EnergyO© 15 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.3 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 3.5 "C/W
ReJA Junction-to-Ambient - 65
1
02/12/01
IRFIZ48V
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.064 - V/°C Reference to 25°C, ID = 1mA co
RDS(on) Static Drain-to-Source On-Resistance - - 12.0 mn VGS = 10V, ID = 43A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGs, ID = 250pA
gfs Forward Transconductance 35 - - S VDs = 25V, ID = 43A@©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 N/ns = 48V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 110 lo = 72A
Q95 Gate-to-Source Charge - - 29 nC VDs = 48V
di Gate-to-Drain ("Miller") Charge - - 36 N/ss = 10V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 7.6 - VDD = 30V
t, Rise Time - 200 - ID = 72A
tam Turn-Off Delay Time - 157 - ns Rs = 9.19
if Fall Time - 166 - Ro = 0.349, See Fig. 10 coco
LD Internal Drain Inductance - 4.5 - Between trf D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1985 - VGs = 0V
Cogs Output Capacitance - 496 - Vos = 25V
Crss Reverse Transfer Capacitance - 91 - pF f = 1.0MHz, See Fig. 5 ©
Eas Single Pulse Avalanche Energy ©© - 780(5) 170© mJ |AS = 72A, L = 64mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 39 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
. - - 290 . . .
(Body Diode)0D© p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V To = 25°C, Is = 72A, VGs = 0V C9©
trr Reverse Recovery Time - 70 100 ns To = 25°C, IF = 72A
Qrr Reverse Recovery Charge - 155 233 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
G) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 64pH
Rs = 259, IAS = 72A. (See Figure 12)
© Iso 3 72A, di/dt s: 151A/ps, V00 3 V(BR)ross,
T, s: 175°C
GD Pulse width 5 300ps; duty cycle s: 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C .
© Uses IRFZ48V data and test conditions.
t= 60s,t= 60Hz
