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IRFIZ48N-IRFIZ48NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
nternatiional PD9.1407
DOE R tifi IRFIZ48N
" EC il "er PRELIMINARY
HEXFET© Power MOSFET
o Advanced Process Technology
o Isolated Package . VDSS = 55V
0 High Voltage Isolation = 2.5KVRMS s
o Sink to Lead Cree a e Dist. = 4.8mm _
p g A RDS(on) = 0.0169
o Fully Avalanche Rated G
ID = 36A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, , ttthi''.,':':.",-':-,-,"-
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications. r-5el'':"k5
The TO-220 Fullpak eliminates the need for additional 'sis)'))),:":):,,,.,
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 25 A
IDM Pulsed Drain CurrentC) © 210
PD @Tc = 25''C PowerDissipation 42 W
LinearDerating Factor 0.28 W/°C
Ves Gate-to-SourceVoltage i 20 V
EAS Single Pulse Avalanche Energy©© 270 mJ
IAR AvalancheCurrent®© 32 A
EAR Repetitive Avalanche Energy® 4.2 mJ
dv/dt Peak Diode Recovery dv/dt@© 5.6 V/ns
T: Operating Junction and -55 to + 175
TSTG StorageTemperature Range °C
Soldering Temperature, for 1 Oseconds 300 (1 .6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.6 °CNV
ReJA Junction-to-Ambient - 65
|RFIZ48N
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdovmVoltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance --.- --.- 0.016 f2 VGs = 10V, ID = 22A (E)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 22 - - S VDs = 25V, ID = 32A©
loss Drain-to-Source LeakageCurrent - - 25 PA VDS = MV, VGS = 0V
- - 250 VDS = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 89 ID = 32A
Qgs Gate-to-Source Charge - - 20 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 39 VGS = 10V, See Fig. 6 and 13 CKE)
td(on) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 78 - ns ID = 32A
tam) Turn-Off Delay Time --.- 32 --.- R9 = 5.19
tr Fall Time - 48 - RD = 0.859, See Fig. 10 (MD
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls IntemaISourcelnductance - 7 5 - from package G
. and center of die contact s
Ciss InputCapacitance - 1900 - VGs = 0V
Coss OutputCapacitance - 620 - pF I/os = 25V
Crss Reverse TransferCapacitance - 270 - f = 1.0MHz, See Fig. 5©
C Drainto Sink Capacitance - 12 - f = 1.0M Hz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 36 showing the HM
ISM Pulsed Source Current A integral reverse G BSA
(Body Diode)O© - - 210 p-njunctiondiode. s
l/so Diode Forward Voltage - - 1.3 V To = 25°C, Is = 22A, VGS = 0V (4)
trr Reverse RecoveryTime - 94 140 ns T J = 25°C, IF = 32A
er Reverse RecoveryCharge - 360 540 nC di/dt = 100A/ps Cr) ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 530pH
Rs = 259, IAS = 32A. (See Figure 12)
© Isro S 32A, di/dt S 250A/ps, VDDS V(BR)ross,
To S 175°C
GD Pulse width s: 300ps; duty cycle LC 2%.
G) t=60s, f=60Hz
© Uses IRFZ48N data and test conditions
