IRFIZ48G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelntematiqhal
TOR Rectifier
PD-9.873
IRFlZ48G
HEXFET® Power MOSFET
. Isolated Package
..
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IRFIZ48G-IRFIZ48GPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international!
1:212 Rectifier
PD-9.873
IlRFlZ48G
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation= 2.5KVRMS (5)
Sink to Lead Creepage Dist,-- 4.8mm
175°C Operating Temperature
Dynamic dv/dt Rating
Low Thermal Resistance
Koss T-"." 60V
ID = 37A
RDS(on) =. 0.0189
on-resistance and cost-effectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fulipak is mounted to a heatsink
" Elh‘i
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vas @ 10 V 37
ID © To = 100°C Continuous Drain Current, Vas © 10 V 26 A
IDM Pulsed Drain Current C) 150
Po @ Tc = 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 100 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
T, Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibbin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Fhuc Junction-to-Case - - 3.0 °CNV
R&JA Junction-to-Ambient - - 65
IRFliii548G
Electrical Characteristics © To 'IIT. 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BFI)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs=0V, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - I/PG Reference to 25°C, In: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.018 9 VGs=10V, ko=22A C4)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID: 2500A
gis Forward Transconductance 17 - - S Vns=25V, kr=22A ©
loss Drain-to-Source Leakage Current - - 25 uA 1hss=601/, VGS=0V
- - 250 Vos=48V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 Vss---20V
ch Total Gate Charge - - 110 ID=72A
Qgs Gate-to-Source Charge -- - 29 DC Vos=48V
the Gate-to-Drain ("Miller") Charge - - 36 VGs=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.1 - VDD=30V
tr Rise Time - 250 - ns ID=72A
td(oft) Turn-Off Delay Time - 210 - Rs=9.1n
tr Fall Time - 250 - RD=0.34Q See Figure 10 co
Lo Internal Drain Inductance - 4.5 - t2(rll.stilnd.') D
nH from package iii))
Ls Internal Source Inductance - 7.5 - Ind center df
die contact 5
Ciss Input Capacitance - 2400 - VGs=OV
Coss Output Capacitance - 1300 - pF Vos--- 25V
Crss Reverse Transfer Capacitance - 190 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 37 MOSFET symbol D
(Body Diode) A showing the (c-,-.,
ISM Pulsed Source Current - - 150 integral P'"".'."' G (tL]
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V TJ=25°C, |s=37A, VGs=0V ©
tn Reverse Recovery Time - 120 180 ns TJ=25°C, lp=72A
th Reverse Recovery Charge - 0.50 0.80 no di/dt=100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L--85PH
Re=259, lAs=37A (See Figure 12)
© ISDS7 2A, di/de200A/ps, VDDSV(BR)Dss,
TJs175°C [
© t=60s, f=60HZ
© Pulse width S 300 us; duty cycle 52%.
