IRFIZ46NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFIZ48G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelntematiqhal
TOR Rectifier
PD-9.873
IRFlZ48G
HEXFET® Power MOSFET
. Isolated Package
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IRFIZ46NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 95595
"RFIZ46NPbF
International
TOR Rectifier
q Advanced Process Technology HEXFET Power MOSFET
q Isolated Package
q High Voltage Isolation = 2.5KVRMS S D
o Sink to Lead Creepage Dist. = 4.8mm VDSS = 55V
0 Fully Avalanche Rated
0 Lead-Free G ' FN, RDS(on) = 0.0209
Description I - 33A
Fifth Generation HEXFETs from International Rectifier s D -
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
device for use in a wide variety of applications. r,
Fs-E'.CC,'r.s....
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using TO-220 FULLWK
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGs @ 10V 33
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current TO) 180
Po @TC = 25''C Power Dissipation 45 W
Linear Derating Factor 0.3 W/''C
VGS Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy ©© 230 ttt)
IAR Avalanche Current®© 16 A
EAR Repetitive Avalanche Energy®© 4.5 tth)
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TsTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf'in (1.1Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsoc Junction-to-Case - - 3.3
Ras Junction-to-Ambient - - 65 "CM/
1
07/23/04
IRFlZ46NPbF
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.017 - V/''C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.020 Q VGS = 10V, ID = 19A (D
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vrvs = VGS, ID = 250pA
git Forward Transconductance 16 - - S Vros = 25V, ID = 28A©
loss Drain-to-Source Leakage Current :: IT, Ji, pA [tt =" 3:3; stil-" J'), Tu = 150°C
I Gate-to-Source Forward Leakage - - 100 A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 n N/ss = -20V
Qg Total Gate Charge - - 61 ID = 28A
Qgs Gate-to-Source Charge - - 13 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 24 N/ss = 10V, See Fig. 6 and 13 ©©
tdm) Turn-On Delay Time - 12 - VDD = 28V
t, Rise Time - 80 - ID = 225A
tdw) Turn-Off Delay Time - 43 - ns Rs = 129
tf FaIITime - 52 - RD = 0.989, See Fig. 10 C9©
Lo Internal Drain Inductance - 4.5 - Between |_ead, D
nH 6mm (0.25m) E )
trom package G
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1500 - VGS = 0V
Coss Output Capacitance - 450 - pF VDs = 25V
CrsS Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymbol D
. - - 33
(Body Diode) A showing the
.ISM Pulsed Source Current - - 180 integral reverse G
(Body Diode) ©© p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 19A, VGs = 0V 6)
trr Reverse Recovery Time - 72 110 ns T, = 25°C, IF = 28A
Qrr Reverse Recovery Charge - 210 310 nC di/dt = 100A/ps COO)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© ISD S 28A, di/dt S 240A/ps, VDD S V(BR)DSSa
Tu S 175°C
s t=60s, f=60Hz
© VDD = 25V, starting Tu = 25°C, L = 410pH
Rs = 259, lAs = 28A. (See Figure 12)
© Pulse width 5 300ps; duty cycle s: 2%.
© Uses IRFZ46N data and test conditions
