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TOR Rectifier
PD-9.873
IRFlZ48G
HEXFET® Power MOSFET
. Isolated Package
..
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IRFIZ44GPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.753
IRFIZ44G
tnter1atiip,)t,tall
1:212 Rectifier
HEXFETOD Power MOSFET
o Isolated Package
0 High Voltage Isolation-- 2.5KVRMS cs D V - 60V
o Sink to Lead Creepage Dist.--. 4.8mm DSS -
0 175°C Operating Temperature
0 Dynamic dv/dt Rating G " RDS(on) T/t 0.0289
0 Low Thermal Resistance
s ID lu"." 30A
Description V
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. Sits
The TO-220 Fullpak eliminates the need for additional insulating hardware in tigtiib'
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica '1iiis,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-22O FULLPAK
Absolute Maximum Ratings _
Parameter Max. Units
lo a Tc = 25°C Continuous Drain Current, Ves @ 10 V 30
to @ To = 100°C Continuous Drain Current, Ves @ 10 V 21 A
IDM ', Pulsed Drain Current (D 120
PD © To T-'; 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 WPC
Vas Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 100 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
_ TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfdn (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 3.1 °CNV
RaJA Junction-to-Ambient - - 65
|RFIZ44G
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs=OV, In: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - VPC Reference to 25"C, 10: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0,028 Q Ves=10V, lo=18A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vos, ID: 250PA
gfs Forward Transconductance 15 - - s Vos=25V, |o=18A ©
loss Drain-to-Source Leakage Current - - 25 pA Vros=60V, I/ss-HN
- - 250 Vos=48V, I/ss-HN, TJ=15000
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - ..100 Var=-20V
q, Total Gate Charge - - 95 b--52A
ths Gate-to-Source Charge - - 27 nC Vos=48V
di Gate-to-Drain ("Miller") Charge .-._. - 46 Vss=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 19 - VDD=30V
tr Rise Time - F 120 - ns ID=S2A
tum) Turn-Off Delay Time -.-_ 55 - FIG=9.1n
tt Fall Time - 86 - Ro=0.54§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 23mg]. 2'31: ') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 2500 - VGs=0V F
Coss Output Capacitance - 1200 - pF Ws--.. 25V
Crss Reverse Transfer Capacitance - 200 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. . Max. Units Test Conditions
ls Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the i L,-ali,
ISM Pulsed Source Current -... - 120 integral reverse G I (trl,
(Body Diode) co p-n junction diode. S
Van Diode Forward Voltage - - 2.5 V TJ=25°C, ls=3OA, Vas-HN ©
trr Reverse Recovery Time - 140 300 ns TJ=25°C, lr=52A
Gr Reverse Recovery Charge - 1.2 2.8 no di/dt=100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=12911H
Re=259, IAs---30A (See Figure 12)
TJS175°C
co ISDSS2A, di/dts250A/ps, VDDSV(BR)Dss,
© t=60s, f=60Hz
© Pulse width f 300 us; duty cycle 5.;2%.
