IRFIZ34N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFIZ34V ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRFIZ44GPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFIZ46N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRFIZ46NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFIZ48G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagelntematiqhal
TOR Rectifier
PD-9.873
IRFlZ48G
HEXFET® Power MOSFET
. Isolated Package
..
ISL6530CBZ-T , Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination
ISL6530CR ,Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT TerminationFeaturesModulator (PWM) Controller for DDRAM • Provides V , V , and V voltages for one- and DDQ REF ..
ISL6531CB ,Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT TerminationApplicationsbandwidth product and 6V/µs slew rate which enables high •V , V , and VREF regulation f ..
ISL6531CB ,Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Terminationapplications. It is designed to drive low 1-V = ±1% over full operating range-- - ⋅ VREFDDQ2cost N ..
ISL6532ACR ,ACPI Regulator/Controller for Dual Channel DDR Memory SystemsFeaturesDual Channel DDR Memory Systems• Generates 3 Regulated VoltagesThe ISL6532A provides a comp ..
ISL6532ACRZ , ACPI Regulator/Controller for Dual Channel DDR Memory Systems
IRFIZ34N
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1489B
International
TOR Rectifier IRFIZ34N
HEXFET® Power MOSFET
0 Advanced Process Technology
. Isolated Package D VDSS = 55V
0 High Voltage Isolation = 2.5KVRMS 6)
0 Sink to Lead Creepage Dist. 4.8mm . A RDS(on) = 0.04Q
0 Fully Avalanche Rated G
ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well I t''esC.i.,raFsl-
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety ofapplications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The mouldin com ound used rovides a hi h isolation
capability ang a love thermal 11,l'0J,t','' betwgen the tab T0220 FULLFAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V 21
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 15 A
IDM Pulsed Drain Current C)6) 100
PD @Tc = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 Wf'C
VGS Gate-to-Source Voltage 1 20 V
EAs Single Pulse Avalanche Energy©© 110 m]
IAR Avalanche Current(0© 16 A
EAR Repetitive Avalanche Energyc0 3.7 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 4.1 a
RQJA Junction-to-Ambient - 65 C/W
7/9/04
IRFIZ34N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
meoss Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ko = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.04 Q VGS = 10V, ID = 11A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = Vss, ID = 250pA
9ts Forward Transconductance 6.5 - - S VDS = 25V, ID = 16A©
IDSS Drain-to-Source Leakage Current - - 25 pA VDS = 55V, VGS = 0V
- - 250 VDS = 44V, Vss = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 34 lo = 16A
095 Gate-to-Source Charge - - 6.8 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 14 VGS = 10V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 7.0 - VDD = 28V
tr Rise Time - 49 - ns ID = 16A
td(off) Turn-Off Delay Time - 31 - Rs = 189
tf Fall Time - 40 - Ro = 1.89, See Fig. 10 ©©
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
from package a
Ls Internal Source Inductance - 7.5 - .
and center of die contact 5
Ciss Input Capacitance - 700 - VGS = 0V
Coss Output Capacitance - 240 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 21 MOSFET symbol D
(BodyDiode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C06) - - 100 p-n junction diode. s
Vso Diode ForwardVoltage - - 1.6 V To = 25°C, Is = 11A, VGS = 0V co
t, Reverse RecoveryTime - 57 86 ns To = 25''C, IF = 16A
Qrr Reverse RecoveryCharge - 130 200 nC di/dt = 100A/ps @©
ton Forward Turn-On Time Intrinsictum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© l/oo = 25V, starting T: = 25°C, L = 610pH
Re: 259, IAS = 16A. (See Figure 12)
© ko S 16A, di/dt S 420A/ps, VDD S V(BR)DSS.
To S 175°C
© Pulse width S 300ps; duty cycle S 2%.
s t=60s, f=60Hz
© Uses IRF234N data and test conditions
