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IRFIZ34GPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.752
_ International
Rectifier IRF IZ34G
HEXFET® Power MOSFET
Isolated Package
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IRFIZ34G-IRFIZ34GPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international!
TOR Rectifier
PD-9.752
|RF|Z34G
HEXFET® Power MOSFET
O Isolated Package
o High Voltage isolation: 2.5KVRMS ©
Sink to Lead Creepage Dist.= 4.8mm
o 175°C Operating Temperature
0 Dynamic dv/dt Rating
tt Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Vass = 60V
RDS(on) = 0.0509
s ID ..= 20A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fuilpak is mounted to a heatsink
using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
Io © To = 25°C Continuous Drain Current, I/tss © 10 V 20
fro @ To = 100°C Continuous Drain Current, Ves @ 10 V 14 A
IDM Pulsed Drain Current C) 80
Pro @ To = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 WPC
I/tss Gate-to-Source Voltage '.20 V
EAS ' Single Pulse Avalanche Energy © 300 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Reuc Junction-to-Case - - 3.6 °CNV
RBJA Junction-to-Ambient - - 65
IRFliE34G
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
f"f-"ermesvr
Parameter Min. Typ. Max. Units Test Conditions I
V(anmss Drain-to-Source Breakdown Voltage 60 - - V VGs=OV, ID: 250PA "
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 - VPC Reference to 25°C, lo: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.050 Q Ves=10V, lo=12A ©
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 250pA
gis Forward Transconductance 9.2 - - S Vos=25V, lo=12A ©
loss Drain-to-Source Leakage Current : I ji', uA ::::::x' x:::gz TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
% Total Gate Charge - - 46 kr=30A
Qgs Gate-to-Source Charge - - 11 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 22 VGs=1OV See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 13 - VDD=30V
tr Rise Time - 100 - ns ID=30A
td(off) Tum-Off Delay Time - 29 - Re=129
t, Fall Time - 52 - Ro=1.0Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - g ntvnezeg ste. ') |__D
nH from package aggr)
Ls Internal Source Inductance - 7.5 - Ind center 6f :1;
die contact s
Ciss Input Capacitance - 1200 - VGs=0V
Coss Output Capacitance - 600 - pF V95: 25V
Crss Reverse Transfer Capacitance - 100 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 20 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 80 integral (everge G
(Body Diode) Ci) p-n junction diode. S
I/sro Diode Forward Voltage - - 1.6 V Tr=25"C, ls=20A, VGs=0V ©
tn Reverse Recovery Time - 120 230 ns TJ=25°C, IF=30A
G, Reverse Recovery Charge - 0.70 1.4 uC di/dt=100A/us ©
ton Forward Tum-On Time Intrinsic tum-on time is neglegible (tum-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=87511H
Fltr=250, lAs=20A (See Figure 12)
TJS175°C
© ISDS3OA, di/dts200A/us, VDDSV(Brt)Dss,
© t=60s, f=60Hz
© Pulse width s; 300 us; duty cycle s:2%.
