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IRFIZ24G-IRFIZ24GPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
kttennatiiartall
Th!hit Rectifier
PD-9.751
IRFIZZ4G
HEXFET6 Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation--. 2.5KVRMS C6)
Sink to Lead Creepage Dist.= 4.8mm
175°C Operating Temperature
Dynamic dv/dt Rating
. Low Thermal Resistance
VDSS = 60V
ID = 14A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
'11iiiii"es,
TO-22O FULLPAK
Parameter Max. Units_
ID @ To = 25°C Continuous Drain Current, Vas @ 10 V 14
ID @ Tc = 100°C Continuous Drain Current, Ves a 10 V 10 A
IDM Pulsed Drain Current (i) 56
Pro @ Tc = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 WPC
Vas Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 100 ml
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction and -55 to +175
Tam Storage Temperature Range ot
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1 " N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - - 4.1
' . °C/W
ReJA Junction-to-Ambient - - 65 j
IRFIZZ4G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 60 - - V Ves=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp, Coefficient - 0.061 - V/°C Reference to 25°C, ID: 1mA
Roam) Static Drain-to-Source On-Hesistance - - 0.10 n VGs=10V, |D=8.4A ©
Tgr,)"' Gate Threshold Voltage 2.0 - 4.0 v vDs=sz, In: 250PA
bs" Forward Transconductance 5.8 - - S Vos=25V, ID=8.4A ©
- . - - 25 Vos=60V, Ves=OV
loss Drain-to-Source Leakage Current - - 250 WA Vos=48V. Ves=0V, TJ=1SO°C
Tir"-- Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
09 Total Gate Charge - - 25 ID=17A
Qgs Gate-to-Source Charge - - 5.8 " Vos=48V
di Gate-to-Drain ("Miller") Charge - - 11 VGs=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 13 - VDo=30V
t, Rise Time - 58 - ns ID=17A
tam) Turn-Off Delay Time - 25 - Re=18$2
t1 Fall Time - 42 - RD=1.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 'ter,rlllifif,i.') D
nH from package fig
Ls Internal Source Inductance - 7.5 - Ind center 6f
; die contact s
Ciss Input Capacitance - 640 - I/as-HN
Coss Output Capacitance - 360 - pF Vos--. 25V
Cm , Reverse Transfer Capacitance - 79 - f=1.0MH2 See Figure 5
'f, Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the F7:
ISM Pulsed Source Current - - 56 integral reverse G (trl
(Body Diode) C) p-n junction diode. s
I/sn Diode Forward Voltage - - 1.5 V TJ=25°C, |s=14A, Vss--0V ©
trr , Reverse Recovery Time - 90 180 ns TJ=25°C, IF=17A
er Reverse Recovery Charge - 0.32 0.64 wc dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=595yH
RG=25f2, IAS=14A (See Figure 12)
C3) Isos 17A, di/dts140A/ps, VDDSV(BR)DSS,
TJS175°C
© t=603, f=60Hz
(ii) Pulse width s; 300 us; duty cycle 32%.
