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IRFIBF20G
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
1rtter,trstiatiiip,t,ttig
162R Rectifier
PD-9.855
IRFll3F20G
HEXFETO Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation.-:., 2.5KVRMS (5)
Sink to Lead Creepage Dist.-- 4.8mm
Dynamic dv/dt Rating
Low Thermal Resistance
D VDSS = 900V
RDS(on) = 8.09
s ID = 1.2A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
'igtiib
"ili(iiie,
TO-220 FULLPAK
SHEETS
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10 V 1.2
Io © Tc = 100°C Continuous Drain Current, Vas @ 10 V 0.79 A
IDM Pulsed Drain Current (O 4.8
Po © Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy 2 150 mJ
IAR Avalanche Current co 1.2 A
EAR Repetitive Avalanche Energy co 3.0 mJ
dv/dt Peak Diode Recovery dv/dt © 1.5 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf.in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 4.1 D C AN
Rem Junction-to-Ambient - - 65
IRFIBF20G
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 900 - - V Vcs=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.1 - V/°C Reference to 25°C, ID: 1mA
Roman) Static Drain-to-Source On-Resistance - - 8.0 Q VGs=1OV, |D=0.72A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGS, ID: 250yA
gfs Forward Transconductance 0.90 - - S Vos=50V, 10:0.72A (ii)
loss Drain-to-Source Leakage Current - - 100 pA Vts=900V, Vair=0V
- - 500 VDs=720V, VGS=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge --. - 38 |D=1.7A
Qgs Gate-to-Source Charge - - 4.7 no Vos=360V
di Gate-to-Drain ("Miller") Charge - - 21 Ves=10V See Fig. 6 and 13 C4)
tam) Tum-On Delay Time - 8.0 - VDD=450V
tr Rise Time - 21 - ns |D=1.7A
td(oii) Turn-Off Delay Time - 56 - Re=18§2
tr Fall Time - 32 -... Ro=280§2 See Figure 10 @
Ln Internal Drain Inductance - 4.5 - 't,111e(e/1.lte.') £0
nH from package G
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Gigs Input Capacitance - 490 - Vss--0V
Coss Output Capacitance - 55 - pF VDs=25V
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 1 2 MOSFET symbol D
(Body Diode) ' A showing the '71)
ISM Pulsed Source Current - - 4.8 integral reverse G (tLl
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.5 V TJ=2SOC, Is=1.2A, Vss=OV GD
tn Reverse Recovery Time - 350 530 ns TJ=25°C, IF=1.7A
C), Reverse Recovery Charge - 0.85 1.3 p1C di/dt=100A/gs C4)
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+luo)
Notes:
(IC) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=196mH
RG=25§2, IAs=1.2A (See Figure 12)
© ISDS1.7A, di/dtsi70/Ws, VDDSBOO ,
TJS150°C
© t=60s, f=60Hz
© Pulse width 3 300 us; duty cycle 32%.
