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IRFIBE30G
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international
Rectifier
PD-9.854
IRFIBESOG
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation.---. 2. 5KVRMS ©
o Sink to Lead Creepage Dist.= 4.8mm
0 Dynamic dv/dt Rating
q Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D l/DSS = 800V
A RDS(on) - 3 09
s ID = 2.1A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. M I Units
ID © To = 25°C Continuous Drain Current, Vss @ 10 V 2.1 J
iLQIC = 100°C Continuous Drain Current, I/ss © 10 v 1.4 ------ " A
IDM Pulsed DrainEgggnLGlh - 8.4 I
Po @ Tc = 25°C Power Dissipation ___-_-- 2,2, g 35 i, W
Linear Derating Factor _-------- 0.28 WPC
Vas Gate-to-Source Voltage +20 V
EAs Single Pulse Avalanche Ensrrig_C.C, g 240 - - - "iEj"
IAR Avalanche Current C) - E - - 2.1 A l
EAR Repetitive Avalanche Energy (D E .2“ 3.5 mi l
dv/dt Peak Diode Recovery dv/dt © ' _‘_n 2.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from caseLh~ mih—
Mounting Torque, 6-32 or M3 screw 10 Ltrtti1(1 A N-m) i
Thermal Resistance
__fPfiTy_ster Min. f Typ. T.hMax. Units
ch J.unHon-.toet s-------)-- - - I 3.6 °C/W
RBJA Junction-to-Ambient _R¥ - i - - l 65
IRFiBE30G
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 800 - - V Vas-HN, lo: 250WA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.90 - VPC Reference to 25°C, Io: 1mA
Roam) Static Drain-to-Source On-Resistance - - 3.0 Q VGs=10V, |o=1.3A (4)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos=-Vas, Io: 250PA
gfs Forward Transconductance 1.7 - - S Vos=50V, lo=I.3A ©
loss Drain-to-Source Leakage Current _ - 100 uA VDS:800V' VGS=OV
- - 500 Vos=640V, Veszov, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
q, Total Gate Charge - - 78 ID=4.1A
Qgs Gate-to-Source Charge - - 9.6 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - - 45 VG5=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 - Voo=400V
t, Rise Time - 33 - ns ln=4.1A
tum) Turn-Off Delay Time - 82 - 962129
t, Fall Time - 30 ......- RD=95§2 See Figure 10 co
las Internal Drain Inductance - 4.5 - t erltqtvnezea lti'nd. ') D
nH from package GE:
Ls Internal Source Inductance - 7.5 - and center 0f :3
die contact s
Gigs Input Capacitance - 1300 - Vss=0V
Cass Output Capacitance - 310 - pF Vos=25V
Crss Reverse Transfer Capacitance - 190 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 2 1 MOSFET symbol D
(Body Diode) ' A showing the ir
ISM Pulsed Source Current - - 8 4 integral reverse G i
(Body Diode) (i) . p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=2.IA, Ves=0V ©
trr Reverse Recovery Time - 480 720 ns TJ=25OC, IF=4.1A
G, Reverse Recovery Charge - 1.8 2.7 p.C di/dt=100A/ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=102mH
RG=25£2, lAs=2.1A (See Figure 12)
© ISDS4.1A, di/dts:100A/rts, VDDSGOO ,
TJS150°C
© t=60s, f=60Hz
GD Pulse width s: 300 us; duty cycle 52%.
