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IRFIBC40GLC
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
192R Rectifier
PD-9.1211
ilRFlBC40GLC
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation-- 2.5KVRMS (5)
o Sink to Lead Creepage Dist.= 4.8mm
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D vDSS Td.. 600V
r3, RDS(OI’I) = 1.29
S 'D '''=' 3.5A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas © 10 V 3.5
In @ Tc = 100°C Continuous Drain Current, I/ss © 10 V 2.2 A
IDM Pulsed Drain Current (D 14
Po © Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 W/‘C
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Q) 320 mJ
IAR Avalanche Current 6) 3.5 A
EAR Repetitive Avalanche Energy C) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt S 3.0 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range " °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
iMounting Torque, 6-32 or M3 screw 10 Ibf-in (1 :1 Nlm)
Thermal Resistance
l Parameter Min. Typ, Max. Units
Rem: 'i' Junction-to-Case -- -... 3.1 °C/W
: Fla, , Junction-Io-Ambient .-r-F - 65
IRFll3C40GLC
Electrical Characteristics tii) Tg LT." 25°C (unless otherwise specified)
Parameter Min. _ Typ. Max. Units Test Conditions
V(BR)oss Drain-to-Source Breakdown Voltage 600 - - V VGS=0V, lo: 250PA
AV(BR)DS$/ATJ Breakdown Voltage Temp. Coefficient - 0.70 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.2 g2 Vos-r-nov, ID=2.1A ©
- - Vss=V, lo=A ©
Vssim) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, lo: 250PA
gis Forward Transconductance 3.7 - - S Vos=100V, 10:3.7A G)
loss Drain-to-Source Leakage Current - - 25 prA VDs=6001l, VGS=0V
- - 250 Vos=480V, Ves=0V, TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch, Total 96.119 Qhargse. ct TC 39 Io=6.2A
Qgs (iiiritetp_-ipyIpttphiiyge, = TC. 10 " VDs=360V
di Gate-to-Drain ("Miller") Charge = CT 19 - Vgs=1py__See Fig. , _an_d 13 ©
tdion) Turn-On Delay Time - 12 - VDD=300V
tr Rise Time - 20 - n s 10:6.2A
td(off) Turn-Off Delay Time - 27 - Pc=9.1Q
t Fall Time - 17 - Ro=47f2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 't2t"i'J. Jt'/i. ') D
nH from package {Fiji
Ls Internal Source Inductance - 7.5 - apd center of
die contact 5
Ciss Input Capacitance = 1199 : Ves=OV
C5935 Output Capacitance = 149 f pF Vos= 25V
_Crss Reverse Transfer Capacitance - _1. 5 = f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
ls Continuous Source Current _ - 3 5 MOSFET symbol D
(Body Diode) _ A showing the L,-,''-)
ISM Pulsed Source Current - - 14 integral r9ver9e G :3.
(Body Diode) co p-n junction diode. s
Vsn Diode Forward Voltage - - 1.5 V TJ=25°C, Is=3.5A, Vss=OV ©
tn Reverse Recovery Time - 440 660 ns TJ=25°C, |F=6.2A
er Reverse Recovery Charge - 2.1 3.2 “C di/dt=100A/u$" ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=12WH
Rs---25n, lAs=3.5A (See Figure 12)
TJS150°C
Q) ISDSBZA, di/dts80A/ps, VDDSWBRpss,
© t=60s, f=60Hz
© Pulse width 5 300 As; duty cycle 32%.
