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ISER
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IRFIBC40G-IRFIBC40GPBF
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.852
llrtterrtatiional
192R Rectifier _ IRFIBC4OG
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation--- 2.5KVRMS © D V - 600V
0 Sink to Lead Creepage Dist.--- 4.8mm DSS -
0 Dynamic dv/dt Rating
0 Low Thermal Resistance G L r, RDS(on) = 1.29
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-22O FULLPAK
Absolute Maximum Ratings
Parameter _ Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vos @ 10 V w 3.5
13919110010 Continuous Drain Current, Vss @ 10 V 2.2 r A
tom Pulsed Drain Current C) 14
Po © To = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 WPC
Vss Gate-to-Source Voltage 4:20 V
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current co - 3.5 A
EAR Repetitive Avalanche Energy Ci) 4.0 - mJ
dv/dt Peak Diode Recovery dv/dt © _ - 3.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range - "C
-.____.fip1erl!1g_T_empeeture, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw - __ 10 llof1ip. (1.1 N'TL J
Thermal Resistance
- wykkkkw Parameter Min. l Typ. M Max. Units H
.8242. Junction-to-Case - - 3.1 o C /W
_ Ram -clyry_1oprty_rhrr1ty_ept, - - 65
IRFll3C40G
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
1 Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 600 - - V Vss--0V, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.70 - VPC Reference to 25°C, Io: 1mA
Rosmn) Static Drain-to-Source On-Resistance - -..- 1.2 n Ves=10V, ID=2.1A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos-Ass, ID: 250pA
gis Forward Transconductance 4.9 - - S VDs=50V, ID=2.1A GD
loss Drain-to-Source Leakage Current -- - 100 11A Vos=600V, VGS=OV
- - 500 Vos=480V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
09 Total Gate Charge - - 60 |D=6.2A
Qgs Gate-to-Source Charge - - 8.3 " Vos=360V
di Gate-to-Drain ("Miller") Charge - - 30 VGs=10V See Fig. 6 and 13 C4)
td(on) Turn-On Delay Time - 13 - Voo=300V
tr Rise Time - 18 .--. ns |D=6.2A
Wot!) Turn-Off Delay Time - 55 - RG=9.1Q
ti Fall Time - 20 - RD=47Q See Figure 10 Cs)
Lo Internal Drain Inductance - 4.5 - t,1vratie.') D
nH from package GE:
Ls Internal Source Inductance - 7.5 - apd center Of E3
die contact s
Ciss Input Capacitance - 1300 - VGs=0V
Coss Output Capacitance .-.-. 160 - pF VDs=25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
, C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 5 MOSFET symbol D
(Body Diode) . A showing the *7:
ISM Pulsed Source Current - - 14 integral reverse G (tLI'
(Body Diode) co p-n junction diode. s
I/so Diode Forward Voltage - P-.. 1.5 V TJ=25°C, ls=3.5A, Vss=OV CO
tn Reverse Recovery Time -._.. 470 940 ns TJ=25°C, IF--6.2A
G, Reverse Recovery Charge - 4.0 7.9 PC di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=74mH
RG---25O, |AS=3.5A (See Figure 12)
TJS150°C
© Isoss.2A, di/dtSBOA/us, VDDSV(BR)DSS,
© t=60s, f=60Hz
© Pulse width S 300 us; duty cycle 32%.
