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IRFIBC30G
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.851
International
1:212 Rectifier _ IllRFll3C30G
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation-- 2.5KVRMS ©
. . - v =- 600V
o Sink to Lead Creepage Dist.r= 4.8mm DSS
0 Dynamic dv/dt Rating
0 Low Thermal Resistance RDS(on) .= 2.29
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. Ch
The TO-220 Fullpak eliminates the need for additional insulating hardware in tgitiib
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica '1tiiies
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vas @ 10 V 2.5
lo © To = 100°C Continuous Drain Current, Ves © 10 V 1.6 A
lDM Pulsed Drain Current (D 10
Po © To = 25°C Power Dissipation 35 W
Linear Derating Factor 0.28 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 250 mJ
IAR Avalanche Current Ci) 2.5 A
EAR Repetitive Avalanche Energy C) 3.5 mJ
dv/dt Peak Diode Recovery dv/dt co 3.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - .....- 3.6
' , °C/W
Riot Junction-to-Ambient - - 65
IRFll3C30G TOR
Electrical Characteristics © Tg = 25°Cr(unless otherwise specified)
l Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 600 - - V Ves=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.62 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 2.2 n VGs=10V, |D=1.5A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250PA
Ps Forward Transconductance 2.2 - - S Vos=50V, ID=1.5A ©
loss Drain-to-Source Leakage Current - - 100 pA Vros=600V, Vtss=OV
-- - 500 VDs=480V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - _ -1OO VGs=-20V
q, Total Gate Charge - - 31 |D=3.6A
Qgs Gate-to-Source Charge - - 4.6 nC Vos=360V
di 1 Gate-to-Drain ("Miller") Charge - - 17 Ves=10V See Fig. 6 and 13 C9
tam.) Turn-On Delay Time - 11 - Voo=300V
t, Rise Time - 13 - ns ID--3.6A
tam) Tum-Off Delay Time .-..... 35 - Re=12Q
tr Fall Time - 14 - RD=82Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - het")').)','),:'.') (ii-i. D
nH from package G 14" )
Ls Internal Source Inductance - 7.5 - Ind center Of
die contact s
Ciss Input Capacitance - 660 - VGs=0V
Cass Output Capacitance - 86 - PF Vos=25V
Crss Reverse Transfer Capacitance -- 19 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 2 5 MOSFET symbol D
(Body Diode) . A showing the _lrlj')
13M Pulsed Source Current - - 10 integral {everge oiilrlir,,i'
(Body Diode) CO p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V T J=25°C. Is=2.5A, Vss=0V C4)
trr Reverse Recovery Time - 400 810 ns TJ=2SOC, IF=3.6A
er Reverse Recovery Charge - g 2.1 4.2 11C di/dt=100A/ws co
ton Fo rward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by (3) ISDS3.6A. di/de60A/ws, VDDSV(BR)DSS. C5) t=60s, f=6OHz
max. junction temperature (See Figure 11) TJS150°C
Q) VDD=50V, starting TJ=25°C, L=73mH co Pulse width S 300 us; duty cycle c2%.
Re=25£2, lAs=2.5A (See Figure 12)
