IRFIB8N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-220FullPak packageApplicationsV R typ. IDSS DS(on) D Switch Mode Power Supply (SMPS) 500V 290mΩ 6.7A UninterruptIb ..
IRFIBC20 ,Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)applications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFIBC20G ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFIBC20GPBF ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.850
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1nteroatktr?al
TOR Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
IRFIBC30G ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
HEXFET® Power MOSFET
. Isolated Package
q High Voltage Isolatio ..
IRFIBC40G ,600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
ISL6528CB ,Dual Regulatorapplications. The dual-output • Small converter sizecontroller drives an N-Channel MOSFET in a stan ..
ISL6528CB-T ,Dual RegulatorFeaturesand Linear Power Controller• Provides two regulated voltagesThe ISL6528 provides the power ..
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IRFIB8N50K
500V Single N-Channel HEXFET Power MOSFET in a TO-220FullPak package
International
TOR Rectifier
SMPS MOSFET
PD - 94444
IRFIB8N50K
A li ti HEXFET@ Power MOSFET
Ica Ions
o pgwitch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID
. Uninterruptlble Power Supply 500V 290mQ 6.7A
q High Speed Power Switching
Benefits
q Low Gate Charge Qg results in Simple
Drive Requirement
q Improved Gate, Avalanche and Dynamic " *
dv/dt Ruggedness
. Fully Characterized Capacitance and TO-220
Avalanche Voltage and Current FULL-PAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS © 10V 6.7
ID @ TC = 100°C Continuous Drain Current, l/ss @ 10V 4.2 A
IDM Pulsed Drain Current (D 27
PD @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.36 W/''C
VGS Gate-to-Source Voltage A30 V
dv/dt Peak Diode Recovery dv/dt © 17 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torqe, 6-32 or M3 screw 1.1(10) N'm(lbf-in)
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 290 mJ
I AR Avalanche Current OD - 6.7 A
EAR Repetitive Avalanche Energy C) - 4.5 m J
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 2.76 °C/W
ROJA Junction-to-Ambient - 65
1
4/21/04
IRFll38N50K
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Ves = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 290 350 mn VGS = 10V, b = 4.0A ©
VGS(lh) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250PA
loss Drain-to-Source Leakage Current - - 50 pA Vos = 500V, N/ss = 0V
- - 250 Vos = 400V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/cs = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 4.7 - - V I/os = UN, ID = 4.0A
09 Total Gate Charge - - 89 ID = 6.7A
Qgs Gate-to-Source Charge - - 24 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 44 I/cs = 10V (E)
tam) Turn-On Delay Time - 17 - VDD = 250V
t, Rise Time - 16 - lo = 6.7A
td(off) Turn-Off Delay Time - 28 - ns Rs = 389
t, Fall Time - 8.4 - Vss = 10V ©
ciss Input Capacitance - 2160 - Ves = 0V
Cass Output Capacitance - 240 - Vos = 25V
Crss Reverse Transfer Capacitance - 27 - pF f = 1.0MHz
Cass Output Capacitance - 2600 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 62 - I/ss = 0V, Vos = 400V, f = 1.0MHz
Coss eff Effective Output Capacitance - 120 - VGS = 0V, Vos = 0V to 400V ©
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 6.7 MOSFET symbol a
(Body Diode) A showing the
ISM Pulsed Source Current - - 27 integral reverse G
(Body Diode) C06) p-njunction diode. S
VSD Diode Forward Voltage - - 2.0 V Tu = 25°C, IS = 6.7A, VGS = 0V ©
trr Reverse Recovery Time - 430 640 ns To = 25°C, IF = 6.7A
Qrr Reverse RecoveryCharge - 2840 4270 nC di/dt = 100/Vps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
© Starting T "
25°C, L = 13mH, Rs = 259,
IAS = 6.7A, dv/dt = 17V/ns (See Figure 12a).
© ISD S 6.7A, di/dt S 330A/ps, VDD S V(BR)ross,
T: f 150°C.
B) Pulse width 5 300ps; duty cycle 3 2%.
© Cass eff. is a fixed capacitance that gives the same charging time
as Coss while I/os is rising from 0 to 80% Voss.
