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IRFIB6N60A-IRFIB6N60APBF
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-91813
International
a R tifi SMPS MOSFET IRFll36N60A
TaR ec I Ier
HEXFET® Power MOSFET
Applications
o Switch Mode Power Supply ( SMPS) Voss Rds(on) max ID
q Uninterruptable Power Supply 600V 0.750 5.5A
0 High speed power switching
. High Voltage Isolation = 2.5KVRMS©
Benefits
0 Low Gate Charge Qg results in Simple
Drive Requirement ' iii-s-tiss-cts!!
o Improved Gate, Avalanche and dynamic E5,'iek'5
dv/dt Ruggedness "il:):',;;:::,:,
0 Fully Characterized Capacitance and G D S
Avalanche Voltage and Current TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 5.5
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 3.5 A
IDM Pulsed Drain Current CD 37
Po @Tc = 25°C Power Dissipation 60 W
Linear Derating Factor 0.48 W/°C
VGs Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Typical SMPS Topologies:
. Single Transistor Forward
o Active Clamped Forward
Notes (D through ©are on page 8
1
01/12/99
lRFlB6N60A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Vss = 0V, ID = 250PA
RDs(on) Static Drain-to-Source On-Resistance - 0.75 f2 VGS = 10V, ID = 3.3A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA I/rss = 600V, VGS = 0V
- - 250 VDs = 480V, VGS = 0V, To = 150''C
Gate-to-Source Forward Leakage - - 100 VGS = 30V
IGSS Gate-to-Source Reverse Leakage - - -100 nA l/ss = -30V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 5.5 - - S Vos = 25V, ID = 5.5A
Qg Total Gate Charge - - 49 ID = 9.2A
Qgs Gate-to-Source Charge - - 13 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 20 V63 = 10V, See Fig. 6 and 13 ©
tawn) Turn-On Delay Time - 13 - VDD = 300V
tr Rise Time - 25 - ns ID = 9.2A
tum) Turn-Off Delay Time - 30 - Rs = 9.1 C2
tr Fall Time - 22 - RD = 35.59,See Fig. 10 ©
Ciss Input Capacitance - 1400 - I/ss = 0V
Coss Output Capacitance - 180 - Vos = 25V
Crss Reverse Transfer Capacitance - 7.1 - pF f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 1957 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 49 - VGs = 0V, VDs = 480V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 96 - VGs = 0V, I/os = 0V to 480V (S)
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 290 mJ
IAR Avalanche Current0) - 9.2 A
EAR Repetitive Avalanche Energy0) - 6.0 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.1
RNA Junction-to-Ambient - 65 "C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 5 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current _ _ 37 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, Is = 9.2A, VGS = 0V ©
trr Reverse Recovery Time - 530 800 ns To = 25°C, IF = 9.2A
Qrr Reverse RecoveryCharge - 3.0 4.4 PC di/dt = 100Alps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
2
