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IRFIB5N65A

650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

Partnumber Manufacturer Quantity Availability
IRFIB5N65A 50 In Stock

Description and Introduction

650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package The IRFIB5N65A is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 650V  
- **Continuous Drain Current (ID):** 4.2A (at 25°C)  
- **Pulsed Drain Current (IDM):** 16.8A  
- **Gate-Source Voltage (VGS):** ±30V  
- **Power Dissipation (PD):** 48W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.5Ω (at VGS = 10V, ID = 2.1A)  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Output Capacitance (Coss):** 90pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 45ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Description:**  
The IRFIB5N65A is a N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for efficiency in power supplies, motor control, and other power conversion circuits.  

### **Features:**  
- **Fast Switching:** Optimized for high-speed performance.  
- **Low Gate Charge:** Reduces switching losses.  
- **Avalanche Energy Rated:** Ensures robustness in high-energy environments.  
- **Low On-Resistance:** Enhances efficiency in power applications.  
- **Improved dv/dt Capability:** Provides better immunity against voltage transients.  
- **TO-220 Package:** Standard through-hole mounting for easy integration.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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