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IRFI9640G
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.839
International
limit Rectifier IRF|964OG
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation: 2.5KVRMS (5) D V - 200V
o Sink to Lead Creepage Dist.--- 4.8mm DSS - -
0 P-Channel
0 Dynamic dv/dt Rating RDS(on) = 0.509
o Low Thermal Resistance
S |D='6.1A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
ba.rrier wi.th stan.dard TO-220 product. The Fullpak is mounted to a heatsink TO-220 FULLPAK
usmg a single clip or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max, Units
ID @ To = 25°C Continuous Drain Current, Ves @ -10 V -6.1 H
In @ Tc = 100°C Continuous Drain Current, Vas @ -1 O V -3.9 A
IDM V Pulsed Drain Current Ci) -24
Po @ Tc = 25°C Power Dissipation 40 w
Linear Derating Factor t 0.32 WPC
Ves Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 650 mJ
IAR Avalanche Current C) -6.1 A
EAR Repetitive Avalanche Energy C) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range _ °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nun) 4
Thermal Resistance
- Parameter Min. Typ. Max. Units
Rm Junction-to-Caspj - - 3.1 o C AN
Rays Junction-to-Ambient - - 65
IRFI9640G
Electrical Characteristics tii) To Te, 25°C (unless otherwise specified)
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 1 1)
2 VDo=-50V, starting Tr--25oc, L=26mH
RG--25n, IAsz-6.1A (See Figure 12)
(3) lsDs;-1 IA, di/de150A/ps, VDD£V(BR)Dss,
TJS150°C
Parameter Min. Typ. Max. j Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage ..200 - - V V Ves=0V, Iro=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.22 - V/°C Reference to 25°C, ID=-1mA
Fusion) Static Drain-to-Source On-Resistance - - 0.50 Q Ves=-10V, ko---3.7A ©
Vesah) Gate Threshold Voltage -2.0 - -4.0 V _ VDs=VGs, |D=-250uA
gis Forward Transconductance 3.4 - - S VDs=-50V, lo=-3.7A G)
loss Drain-to-Source Leakage Current - - -100 pA Vos=-200V, I/ss-HN
_ - - -500 VDs=-160V, Ves=0V, TJ=125°C
f less Gate-to-Source Forward Leakage - - -100 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 Vss=20V
q, Total Gate Charge - - 44 lo=-11A
Qgs Gate-to-Source Charge - - 7.1 nC Vos=-16OV
di Gate-to-Drain ("Miller") Charge - - 27 Vss---10V See Fig. 6 and 13 co
td(on) Turn-On Delay Time M 14 - Voo=-1OOV
t, Rise Time - 43 - ns |D=-11A
Hom Turn-Off Delay Time - 39 - RG=9.1Q
tf Fall Time - 38 - RD=8.6§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 2 axe $6513: ') D
nH from package EC )
Ls Internal Source Inductance - 7.5 1 - Ind center Of
die contact s
Ciss Input Capacitance - 1200 - VGs=0V
Coss Output Capacitance - 370 5 - pF VDs=-25V
Crss Reverse Transfer Capacitance - 80 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
'; Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -6 1 MOSFET symbol D
3 (Body Diode) . A showing the Lr,1,
ISM Pulsed Source Current - - -24 integral reverse G l‘
(Body Diode) C) p-n junction diode. t)
Vsro Diode Forward Voltage - - -5.0 V TJ=25°C, Is=-6.1A, Nav-UN @
trr Reverse Recovery Time - 250 300 ns TJ=25°C, IF=-11A
er Reverse Recovery Charge - 2.9 3.6 wc di/dt=100/Ws Cs)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co t=60s, f=60Hz
(ii) Pulse width 5 300 us; duty cycle 32%.
