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IRFI9620G
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
h'tternatiiortall
Rectifier
PD-9.874
IRFl9620G
HEXFET® Power MOSFET
q Isolated Package
o High Voltage Isolation---. 2.5KVRMS ©
0 Sink to Lead Creepage Dist.--.. 4.8mm
q P-Channel
0 Dynamic dv/dt Rating
tt Low Thermal Resistance
Description
The HEXFET technology is the key to International Rectifier's advanced line
of power MOSFET transistors. The efficient geometry and unique processing
of the HEXFET design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TC)420 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a Tow thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max. Units
ID © Tc = 25"C Continuous Drain Current, Vas @ -10 V -3.0
(D © Tc = 100°C Continuous Drain Curre_ntd/pt9c1_0_C, -1.9 A
lou Pulsed Drain Current 6) ' -12
Pry @ To = 25°C Power DissipatignR ‘___q__‘_ 30 W J
Linear Derating Factor 0.24 WPC
Vas Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 80 mJ
[An Avalanche Current co -3.0 A
EAR Repetitive Avalanche Energy (O 3.0 mJ
dv/dt ‘m Peak Diode Recovery dv/dt © -5.0 V/ns
TU Operating Junction and -55to +150 I
TSTG Storage Temperature Range =
F Soldering Temperature, for 10 seconds 300 (1.6mm from case) WW
Mounting Torque, 6-32 or M3 screw k 10 lbf-in (1,1 N.m)
Thermal Resistance
f 1 Parameter Min. Typ. Max. 7 Units I
Rmc M,__k~ _Jyr_T.t_iton-to-Case - - 4.1 “CNV l
Ram Junction-to-Ambient - - 65 1 l
IRFl9620G
Electrical Characteristics ig) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(ampss Drain-to-Source Breakdown Voltage -200 - - V VGs=0V, kr=-250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - -O.22 - VPC Reference to 25°C, |o=-1mA
Ros(on) Static Drain-to-Source On-Resistance - - 1.5 Q Vss=-10V, |o=-1.8A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, io=~25OLLA
gts Forward Transconductance 1.3 - - S VDs=-50V, ID=-1.8A (il)
loss Drain-to-Source Leakage Current - - -100 WA Vos=-200V, Var-IV
- - -500 Vos=-160V, I/ss-HN, TJ=12500
less Gate-to-Source Forward Leakage - - -100 n A Var=-20V
Gate-to-Source Reverse Leakage -.. - 100 VGs=2OV
ch Total Gate Charge - - 15 |o=-2.1 A
chs Gate-to-Source Charge - - 3.2 nC Vos=-160V
di Gate-to-Drain ("Miller") Charge - - 8.4. VGs=-1OV See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 8.8 - VDD=-1OOV
tr Rise Time - 27 - ns Io----3.9A
tam) Turn-Off Delay Time - 7.3 - Re=189
tr Fall Time - 19 - RD=24Q See Figure 10 (4)
Lo Internal Drain inductance - 4.5 - tiseit,11eti'j"2stif.') D
nH from package egg)
Ls Internal Source inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance - 340 - VGs=OV
Cuss Output Capacitance - 1 10 - pF l/os---)
Crss Reverse Transfer Capacitance - 33 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -3 0 MOSFET symbol D
(Body Diode) . A showing the 'c,-,-.,,.
ISM Pulsed Source Current - - -1 2 integral reverse G l"
(Body Diode) (D , p-n junction diode. s
Vso Diode Forward Voltage - i - -6.3 V TJ=25°C, |s=-3.0A, Vss=0V co
trr Reverse Recovery Time - :' 150 300 ns TJ=2500, IF=-3.9A
er Reverse Recovery Charge - 'i.' 0.97 2.0 PC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-50V, starting TJ=25°C, L=13mH
HG=25§2, IAS=-3.0A (See Figure 12)
TJS150°C
© Isos-3.9A, di/de95A/ps, VDDSV(BR)DSS.
(5) t--60s, f=60Hz
(4) Pulse width s: 300 ps; duty cycle 32%.
