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IRFI740GLC
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
rltett!atittt,tal
Rectifier
HEXFET® Power MOSFET
PD-9.1209
IRFI74OGLC
0 Ultra Low Gate Charge
o Reduced Gate Drive Requirement V - 400V
o Enhanced 30V VGs Rating DSS -
0 Isolated Package
0 High Voltage Isolation--.. 2.5KVRMS © RDS(on) = 0.559
0 Sink to Lead Creepage Dist.= 4.8mm
o Repetitive Avalanche Rated ID = 5.7A
Description
This new series of Low Charge HEXFETs achieve significantly lower gate
charge over conventional MOSFETs. Utilizing advanced HEXFET tech nology,
the device improvements allow for reduced gate drive requirements, faster a
switching speeds and increased total system savings.These device
improvements combined with the proven ruggedness and reliability that are g}
characteristic of HEXFETs offer the designer a new standard in power
transistors for switching applications, _i:ii:ii)ssiiss,
The TO-220 Fullpak eliminates the need for additional insulating hardware. 'i1iiii1ii)).
The moulding compound used provides a high isolation capability and low TO-220 FULLPAK
thermal resistance between the tab and external heatsink.
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Ves @ 10 V 5.7
In @ To = 100°C Continuous Drain Current, Vss @ 10 V 3.6 A
10M Pulsed Drain Current co 23
P0 @ To = 25°C Power Dissipation 40 W
_ Linear Derating Factor 0.32 WPC
l/tss Gate-to-Source Voltage i30 V
EAS Single Pulse Avalanche Energy © 310 mJ
IAR Avalanche Current C) 5.7 A
EAR Repetitive Avalanche Energy C) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt G) 4.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rasc Junction-to-Case - - 3.1 "C/W
Rm Junction-to-Ambient - - 65
lRFl740GLC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter _ Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V I/tas-HN, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.76 - VPC Reference to 25°C, Io=1mA
Rosm) Static Drain-to-Source On-Resistance - - 0.55 n VGs=10V, 19:3.4A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 250PA
Ts Forward Transconductance 3.0 - - S Vos=50V, ID=6.0A ©
loss Drain-to-Source Leakage Current - - 25 pA Vios=400V, Ver-dh/
- - 250 VDs=320V, Var=0V, Tr--1250C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Cla Total Gate Charge - - 39 ID=1OA
Qgs Gate-to-Source Charge - - 10 nC Vos=320V
di Ca'ate-to-Draih ("Miller") Charge - - 19 VGs=10V See Fig. 6 and 13 ©
tam Turn-On Delay Time - 11 - VDD=200V
tr Rise Time - 31 - ns b=10A
tdon Turn-Off Delay Time - 25 - RG---9.IQ
tf Fall Time - 20 - Ho=20f2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - itl1T1.ltif,i.') D
W from package ifi)
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance - 1 100 - VGs=0V
Coss Output Capacitance - 190 - pF V95: 25V
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 5 7 MOSFET symbol D
(Body Diode) . A showing the Cir)
ISM Pulsed Source Current - - 23 integral reverse G :L
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls=5.7A, I/as-HN (4)
trr Reverse Recovery Time - 380 570 ns Tr=25''C, IF=10A
l Reverse Recovery Charge - 2.8 4.2 PC di/dt=100A/us co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=16mH
RG=25Q IAS=5.7A (See Figure 12)
© ISDS1OA. di/dts120A/us, VDDSV(BR)DSS,
TJS150°C
© t=60s, f=60Hz
© Pulse width s: 300 us; duty cycle 32%.
