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IRFI730G
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international]
Rectifier
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation--.. 2.5KVRMS 6)
0 Sink to Lead Creepage Dist..= 4.8mm
o Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.65OA
IRFr730G
VDSS = 400V
RDS(on) = 1.0g
ID IT.". 3.7A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fulipak is mounted to a heatsink
using a single clip orloy a single screw fixing.
Absolute Maximum Ratings
TO-22O FULLPAK
Parameter Max. Units
Io @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 3.7
In @ Tc = 100°C Continuous Drain Current, VGs © 10 V 2.3 A
IDM Pulsed Drain Current C) 15
pr, © Tc = 25°C Power Dissipation 35 W
E - Linear Derating Factor 0.28 WPC
Vos Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Q) 200 ml
IAH Avalanche Current co 3.7 A
EAR ' Repetitive Avalanche Energy (l) 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range =
"___-__- __1_J§oidering Temperature, for 10 seconds 300 (1.6mm from case)
i Mounting Torque, 6-32 or M3 screw _1fl1b_ri_r1_(1._1, N-m)
Thermal Resistance
Parameter Min. Typ. Max. cfijliir'
Rasc Junction-to-Case - - 3.6 o C /W
RBJA Junction-to-Ambient - - 65
IRFI730G
Electrical Characteristics iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage 400 - - V VGS=OV, ID: 250PA
AV(EF{)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.54 - V/°C Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 1.0 Q VGs=1OV, |D=2.1A g)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGs, ID: 25011A
gfs Forward Transconductance 3.6 - - S Vos=50V, ID=2.1A ©
Iosé , Drain-to-Source Leakage Current - - 25 pA VDS=4OOV' VGFOV
- - 250 VDs=320V, VGS=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage ._ - -1 00 Vss=-20V
Qg Total Gate Charge - - 38 b--3.7A
Qgs Gate-to-Source Charge - - 5.7 no Vos=320V
di Gate-to-Drain ("Miller") Charge - - 22 Ves=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 10 ..e.l. VDD=200V
' tr Rise Time - 15 - ns ID=3.7A
tam) Turn-Off Delay Time - 38 - Re=12Q
ti Fall Time - 14 - Ro--57f2 See Figure 10 C2
Lo Internal Drain Inductance - 4.5 - [e,t,vg"i'on.ltilnd.') D
nH from package SQ: )
Ls Internal Source Inductance - 7.5 - and center df
die contact s
Ciss Input Capacitance - 700 - Ves=0V
Coss Output Capacitance -- 170 - pF Vros--25V
Crss Reverse Transfer Capacitance - 64 - f=1.0MH2 See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 3 7 V MOSFET symbol D
(Body Diode) . T A showing the L-i:
ISM Pulsed Source Current - - 15 integral reverse G (tLI
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage' - - 1.6 V TJ=25°C, ls=3.7A, VGs=OV ©
: tn Reverse Recovery Time - 260 530 ns TJ=250C, IF=3.7A
_ Q,, Reverse Recovery Charge - 1.2 2.2 110 di/dt=100/Ws ©
ton Forward Turn-On Time i Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© t=60s, f=60Hz
G) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting Tu=25''C, L=25mH
RG--25n, |As=3.7A (See Figure 12)
© |SDS3.7A. di/dts90A/ps, VDDSV(BR)DSS.
TJS150°C
(ii) Pulse width s. 300 ps; duty cycle 32%.
