IRFI644 ,250V N-Channel MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI644G ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI644GPBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
ISBR
Rectifier
PD-9.739
IRFl644G
HEXFET® Power MOSFET
0 Isolated Pa ..
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EOR Rectifier
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. Isolated Package
q High Voltage Iso ..
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ISL6522CRZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6522CV ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) ControllerISL6522®Data Sheet November 2002 FN9030.3Buck and Synchronous Rectifier
ISL6522CVZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
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ISL6522IRZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
IRFI644
250V N-Channel MOSFET
hqtennatityrtall
Rectifier
PD-9.739
llRFl644G
HEXFET® Power MOSFET
0 Isolated Package
tt High Voltage Isolation: 2.5KVRMS (5)
o Sink to Lead Creepage Dist.-- 4.8mm
o Dynamic dv/dt Rating
o Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
s ID = 7.9A
Voss = 250V
RDS(on) = 0.28Q
on-resistance and cost-effectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in 1%
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica i'iiiiisiss,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink "s11)ii)iiii:
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGs @ 10 V 7.9
ID @ To = 100°C Continuous Drain Curren1,VGs @ 10 V 5.0 A
IDM Pulsed Drain Current C) 32
PD @ Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 WPC
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Q) 600 mJ
IAR Avalanche Current co 7.9 A
EAR Repetitive Avalanche Energy C) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt C3) 4.8 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rtuc Junction-to-Case - 3.1 oc/IN
RGJA Junction-to-Ambient - 65
IRFI644G
Electrical Characteristics © TJ 1,"d 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGs=0V, kr= 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.34 -- VPC Reference to 25°C, ID: 1mA
RDSM Static Drain-to-Source On-Resistance --.e. - 0.28 n VGs=10V, ko=4.7A (4)
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250pA
gts Forward Transconductance 6.0 - - S VDs=50V, ID=4.7A CE)
loss Drain-to-Source Leakage Current - - 25 pA VDS=250V' Vss=0V
- - 250 Vos=200V, Vas=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A 1/as=201/
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
09 Total Gate Charge - - 68 |D=7.9A
Qgs Gate-to-Source Charge - - 11 nC Vos=200V
di Gate-to-Drain ("Miller") Charge - - 35 VGs=1OV See Fig. 6 and 13 ©
tum) . Turn-On Delay Time - 11 - VDD=125V
tr Rise Time - 24 - ns |D=7.9A
tam) Turn-Off Delay Time - 53 - RG=9.1Q
tr Fall Time - 24 - RD=16.Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - t21(ratilnd.') D
nH from package ii)))
Ls Internal Source Inductance ._ 7.5 - and centerof .
die contact s
Ciss Input Capacitance - 1300 - Ver-OV
Coss Output Capacitance - 330 - pF Vos--. 25V
Crss Reverse Transfer Capacitance - 85 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
Is Continuous Source Current - - 7.9 MOSFET symbol D
(Body Diode) A showing the d:
ISM Pulsed Source Current - - 32 integral reverse t3 trl,
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=7.9A, VGs=0V ©
trr Reverse Recovery Time - 250 500 ns TJ=25°C. IF=7.9A
th Reverse Recovery Charge - 2.3 4.6 PC dildt=100A/us C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=15mH
Rtr-..250, lAs=7.9A (See Figure 12)
© ISDS7.9A, di/dts150A/us, VDDSV(BR)DSS.
TJS150°C
© t=605, f=60Hz
© Pulse width s 300 ps; duty cycle 32%.
