IRFI640G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
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q Isolated Package
q High Voltage Isolation-- 2.5KVRMS (5)
. Sink to Le ..
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IRFI644 ,250V N-Channel MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI644G ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI644GPBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
ISBR
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PD-9.739
IRFl644G
HEXFET® Power MOSFET
0 Isolated Pa ..
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IRFI640G
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International PD-9.649A
149R Rectifier IRFI64OG
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage isolation: 2.5KVRMS © D V - 200V
o Sink to Lead Creepage Dist.., 4.8mm DSS -
It Dynamic dv/dt Rating
qt Low Thermal Resistance , " RDS(on) = 0.189
s ID = 9.8A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc 1%" 25°C Continuous Drain Current, Ves @ 10 V 9.8
In @ To = 100°C Continuous Drain Current, Vos © 10 V 6.2 A
IDM Pulsed Drain Current co 39
Po @ Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 WPC
Vas Gate-to-Source Voltage +_20 V
EAS Single Pulse Avalanche Energy © 430 md
{An Avalanche Current C) 9.8 _ A
EAR Repetitive Avalanche Energy co 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 [ V/ns
T, Operating Junction and -55 to +150 f
Ter Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
c--- Mounting Torque, 6-32 or M3 screw l 1O lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - - 3.1 °C/W
Rm Junction-to-Ambient - - 65
IRF I64OG 142R
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(smoss Drain-to-Source Breakdown Voltage 200 - - V VGS=0V, Io--- 25OWA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - VPC Reference to 25°C, Io: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.18 n VGs=10V, ln=5.9A C9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID: 250PA
ge Forward Transconductance 5.2 - - S VDs=50V. lo=5.9A C4)
loss Drain-to-Source Leakage Current - - 25 pA 1hos=200V, Vas-HN
- - 250 VDs=160V, Vss=OV, Tr=127C
less Gate-to-Source Forward Leakage - -.-... 100 n A VGS=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch, Total Gate Charge - - 70 ID=18A
Qgs Gate-to-St- Charge - - 13 " VDs=160V
di Gate-to-Drain ("Miller") Charge - - 39 VGS=10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 14 - VDD=1OOV
tr Rise Time - 51 - ns b=18A
td(oif) Turn-Off Delay Time - 45 - Re=9.1Q
ti Fall Time ...- 36 - RD=5.4Q See Figure 10 g)
Ln Internal Drain Inductance - 4.5 - tit)tron.lti1nd.') D
nH from package GAE )
Ls Internal Source Inductance - 7.5 - Ind center Of
die contact s
Cas Input Capacitance - 1300 - Vss--0V
Cass Output Capacitance - 400 --.r. pF Vos= 25V
Crss Reverse Transfer Capacitance - 130 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 --.... pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 9 8 MOSFET symbol D
(Body Diode) , A showing the Fir)
Isss Pulsed Source Current - - 39 integral reverse G trl,
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - -- 2.0 V TJ=25°C, ls=9.8A, VGs=0V CD
trr Reverse Recovery Time - 300 610 ns TJ=25°C, IF=18A
er Reverse Recovery Charge - 3.4 7.1 wc di/dt=100A/ps (E)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls-el-ro)
Notes:
co Repetitive rating; pulse width limited by © Isos18A, di/de150A/ws, VDDSWBRmss, © t=60s, f=60Hz
max. junction temperature (See Figure 11) TJS150°C
© Voo=50V, starting TJ=25°C, L=6.7mH © Pulse width S 300 us; duty cycle 32%.
Re=259, IAS--9.8A (See Figure 12)
