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IRFI634G
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.738
'nitarnationtg
:lih!,iillit Rec)tiifitr IRFI634G
HEXFET® Power MOSFET
tt Isolated Package
0 High Voltage isolation: 2.5KVRMS (5)
o Sink to Lead Creepage Dist.= 4.8mm
o Dynamic dv/dt Rating
0 Low Thermal Resistance
Voss "d''''-'' 250V
RDS(on) Ta 0.459
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. Ctt
The T0220 Fullpak eliminates the need for additional insulating hardware in tigtrilt
Commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica _stiiiii)
barrier with standard T0220 product. The Fuilpak is mounted to a heatsink
using a single clip or by a single screw fixing. T0220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
in lit To = 25°C Continuous Drain Current, Vas @ 10 V 5.6
In @ Tc = 100°C Continuous Drain Current, Ves tt 10 V 3.5 A
IDM Pulsed Drain Current G) 22
Po tt Tc = LPC Power Dissipation ' 35 W
Linear Derating Factor 0.28 WPC
V65 Gate-to-Source Voltage sm V
EAS Single Pulse Avalanche Energy tO 300 mi
lAn Avalanche Current Ci) 5.6 A
Em Repetitive Avalanche Energy ti) 3.5 mJ
dv/dl Peak Diode Recovery tht/dt Q 4.8 Vlns
T, Operating Junction and -55 to +150
Tsrs Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibbin (1.1 thm)
Thermal Resistance
Parameter Min. Typ. Max. Units
Flax; Junction-to-Case - - 3.6 °C/w
Ram Junction-to-Ambient - - 65
TIFl634tir, j - BitR
Electrical Characteristics 4t Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units _, Test Conditions i
V(anyoss Drain-to-Source Breakdown Voltage 250 - - V Vas=0V, in: 250PA
AV(BH)DSS/ATJ Breakdown Voltage Temp, Coefficient - 0.30 - VPC Reference to EPC, In: 1mA
Roam; Static Drain-to-Source On-Resistance - - 0.45 Q Vcs=10V, 1923.411 co ,
Vtsson Gate Threshold Voltage 2.0 - 4.0 v Vos=VGs, 19: 2500A 7,
gts Forward Transconductance 2.5 - - S Vos=50V, 10:3-4A (E) 1
loss Drain-to-Source Leakage Current - _."'..".'.'.' 22:0 pA ::::::g::' SZS: TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A l/ar-dot
Gate-to-Sou rce Reverse Leakage - - -100 Ves=-20V
A Total Gate Charge - - 41 Io=5.6A
A, Gate-to-Source Charge - - 6.5 "C Vos=200V
an Gate-to-Drain (''Miller'') Charge - - 22 iVGs=10V See Fig. 6 and 13 (4)
1mm) Tum-On Delay Time - 9.6 - Voo=125V
tr - Rise Time - 21 - ns |D=5.6A
mom Tuml)ii Delay Time - 42 - Rs=t2tt
t Fall Time - 19 - Ru=229 See Figure 10 co
Lo Internal Drain Inductance - 4.5 - tttr/tlr/i.; L”
"H from package a g
Ls Internal Source Inductance - 7.5 - Ind center bt I
die contact s
G, Input Capacitance - 770 w vgsaov
Coss Output Capacitance - 190 - PF V05: 25V
G, Reverse Transfer Capacitance - 52 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
F Parameter Min. Typ. Max. Units Test Conditions 7
Is Continuous Source Current - - 5 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 22 integral reverse G
(Body Diode) Ci) l, p-n junction diode. s
Vso l Diode Forward Voltage - ' - 2.0 v T,m25oC, ls=5.6A, sz=ov (1)
ir, I Reverse Recovery Time - 220 440 ns TJ=25°C. ka--5.6A
On 1 Reverse Recovery Charge - 1.2 2,4 no dildt=100Nus (C)
ton 1 Forward Tum-On Time Intrinsic lum-on time is neglegible (tum-on is dominated by Lsu.o)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
it) Voo=50V, starting Tr-25"C, L=15mH
RG=25Q |A5=5.6A (See Figure 12)
(S) Isoss.6A. dildts120A/us. VDDSV(BR)DSS.
TJS150°C
Cr) t=605. f=60Hz
B) Pulse width s 300 us; duty cycle s.2%.
