IRFI630GPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
IEBR
Rectifier
PD-9. 652A
IRFI630G
HEXFET® Power MOSFET
. Isolated ..
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IRFI630G -IRFI630GPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international!
122R Rectifier
PD-9. 652A
IRFIGSOG
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation: 2.5KVRMS (5)
0 Sink to Lead Creepage Dist.--- 4.8mm
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
s ID = 5.9A
VDSS = 200V
RDS(on) = 0.409
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in 'ggi-iS'
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica '"i1iiii)"j:
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10 V 5.9
lo @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 3.7 A
IDM Pulsed Drain Current (D 24
Pro @ To = 25°C Power Dissipation 35 W
Linear Derating Factor 0.28 W/°C
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 230 md
IAR Avalanche Current CD 5.9 A
EAR Repetitive Avalanche Energy (I) 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and ..55 to +150
TSTS Storage Temperature Range ot
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibfoin (1.1 Nom)
Thermal Resistance
-- Parameter Min. Typ. Max. Units
Rm . Junction-to-Case - - 3.6 O C /W
Ram Junction-to-Ambient - 65
lRFl630G
Electrical Characteristics tii) TU = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(anmss Drain-to-Source Breakdown Voltage 200 - - V Vos=OV, lo: 250PA
Av(gmoss/ATJ Breakdown Voltage Temp. Coefficient - 0.24 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.40 n VGs=10V, |D=3.5A a)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID: zsopA
_ggs Forward Transconductance 3.2 - - S VDs=50V, b=3.5A 3)
loss Drain-to-Source Leakage Current H - 25 uA VDs--200V, VGS=OV
- - 250 Vos=160V, VGs=OV, TJ=125°C
isss Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vss.=-20V
ch Total Gate Charge - - 43 Io=5.9A
Qgs Gate-to-Source Charge - - 7.0 nC VDS=160V
di Gate-to-Drain ("Miller") Charge - .....- 23 VGs=10V See Fig. 6 and 13 ©
_tp(csn). Turn-On Delay Time - 9.4 - Voo=100V
tr Rise Time - 28 - ns ID=5.9A
tum) Turn-Off Delay Time - 39 - Rs.--12n
tf Fall Time - 20 --. RD=1SQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - htel/l Jie.; (il-e] D
nH from package G
Ls j Internal Source Inductance - 7.5 - an center Of
. die contact s
Ciss Input Capacitance - 800 - . VGS=0V
Coss Output Capacitance - 240 ' ~ pF V95: 25V
Crss Reverse Transfer Capacitance - Tf - f=1.0MHz See Figure 5
C Drain to Sink Capacitance -- 12 - pF If=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 5 9 MOSFET symbol D
(Body Diode) . A showing the LT-,-':
ISM Pulsed Source Current - - 24 integral reverse G (trl
(Body Diode) Ct p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=250C, Is=5.9A, Ves=0V ©
tn Reverse Recovery Time - 170 340 ns TJ:25°C, |F=5.9A
Cl,, Reverse Recovery Charge - 1.1 2.2 wc di/dt=1OOA/gs ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=9.9mH
RG--25n, IAS--5.9A (See Figure 12)
© IsosseA, di/dts120A/ps, VooSVasmoss,
TJS150°C
© t=60s, f=60Hz
(ii) Pulse width Si 300 vs; duty cycle 32%.
