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IRFI620G from IR,International Rectifier

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IRFI620G

Manufacturer: IR

200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

Partnumber Manufacturer Quantity Availability
IRFI620G IR 80 In Stock

Description and Introduction

200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package The IRFI620G is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** International Rectifier (IR)  
### **Part Number:** IRFI620G  
### **Type:** N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 5.3A  
- **Pulsed Drain Current (IDM):** 21A  
- **Power Dissipation (PD):** 48W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.65Ω (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 12nC (typical)  
- **Input Capacitance (Ciss):** 300pF (typical)  
- **Output Capacitance (Coss):** 60pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 20pF (typical)  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 35ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Package:** TO-220AB (Through-Hole)  

### **Features:**  
- **Fast Switching:** Optimized for high-speed switching applications.  
- **Low Gate Charge:** Reduces switching losses.  
- **Avalanche Energy Rated:** Enhances ruggedness in inductive load applications.  
- **Low On-Resistance:** Improves efficiency in power conversion.  
- **Planar Technology:** Provides improved performance and reliability.  

### **Applications:**  
- Switching power supplies  
- Motor control  
- DC-DC converters  
- Inverters  
- Industrial and automotive systems  

This information is based on the manufacturer's datasheet and technical documentation.

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