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IRFI4905
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR, Rectifier
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS ©
Sink to Lead Creepage Dist. = 4.8mm
P-Channel
0 Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a Iowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
PD - 9.1526A
IRFI4905
HEXFET® Power MOSFET
VDSS = -55V
RDS(on) = 0.029
|D=-41A
TO-220 FULLPAK
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Ves @ -10V -41
ID @ Tc = 100°C Continuous Drain Current, I/ss @ -10V -29 A
IDM Pulsed Drain Current COO) -260
PD @Tc = 25°C Power Dissipation 63 W
Linear Derating Factor 0.42 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 930 mJ
IAR Avalanche Current0D© -38 A
EAR Repetitive Avalanche Energy00 6.3 mJ
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 2 .4 o
RNA Junction-to-Ambient - 65 C/W
8/25/97
IRFl4905
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - -0.05 - V/°C Reference to 25°C, ID = -1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.02 f2 VGs = -10V, ID = -22A 60
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 21 - - S VDs = -25V, ID = -38A©
loss Drain-to-Source Leakage Current - - -25 pA l/os = -55V, VGS = 0V
- - -250 Vos = -44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 180 ID = -38A
Qgs Gate-to-Source Charge - - 32 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 86 VGS = -10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 18 - VDD = -28V
tr Rise Time - 99 - ns ID = -38A
tum) Turn-Off Delay Time - 61 - R3 = 2.59
tf Fall Time - 96 - RD = 0.72n, See Fig. 10®©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Gil/tj-) )
Ls Internal Source Inductance - 7 5 - from package
. and center of die contact s
Ciss Input Capacitance - 3400 - VGs = 0V
Coss Output Capacitance - 1400 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 640 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - MI MOSFET symbol D
(Body Diode) A showing the 'r-,,-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) (06) - - -260 p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V To = 25°C, ls = -22A, VGs = 0V ©
trr Reverse Recovery Time - 89 130 ns T J = 25°C, IF = -38A
Qrr Reverse RecoveryCharge - 230 350 PC di/dt = -100A/ps @©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See hg. 11 )
© Starting To-- 25°C, L = 1.3mH
RG = 259, IAS = -38A. (See Figure 12)
© ISD S -38A, di/dt S -270Alps, VDD S V(BR)DSS,
To S 175°C
© Pulse width 3 300ps; duty cycle S 2%.
s t=60s, f=60Hz
© Uses IRF4905 data and test conditions
