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IRFI510A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyΩR = 0.4DS(on) Rugged Gate Oxide Tec ..
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IRFl510G
International
irf.JA Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
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ISL6522BCBZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
IRFI4321
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak package
International
TOR Rectifier
Applications
0 Motion Control Applications
PD - 97104
IRFI4321PbF
HEXFET® Power MOSFET
q High Efficiency Synchronous Rectification in SMPS VDss 150V
o Uninterruptible Power Supply
q Hard Switched and High Frequency Circuits RDS(0n) typ. 12.2mQ
Benefits max. 16mf2
0 Low RDSON Reduces Losses In 34A
0 Low Gate Charge Improves the Switching
Performance D
0 Improved Diode Recovery Improves Switching &
EMI Performance _
o 30V Gate Voltage Rating Improves Robustness _
. Fully Characterized Avalanche SOA G A
S TO-22OAB Full-Pak
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
|D @ Tc = 25°C Continuous Drain Current, Vss @ 10V 34 A
ID @ To = 100°C Continuous Drain Current, I/ss @ 10V 21
lost Pulsed Drain Current co 140
PD @Tc = 25°C Maximum Power Dissipation 46 W
Linear Derating Factor 0.37 W/°C
Ves Gate-to-Source Voltage 1-30 V
EAS (Thermally limited) Single Pulse Avalanche Energy © 170 mJ
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case G) - 2.73 oc/w
RmA Junction-to-Ambient © - 65
1
6/23/06
IRFl4321PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V Vas = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 190 - mV/°C Reference to 25°C, ID = 1mA©
RDSW Static Drain-to-Source On-Resistance - 12.2 16 m9 Vss = 10V, ID = 20A ©
Vas(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 150V, Vas = 0V
- - 1.0 mA VDS = 150V, Vss = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Ream) Internal Gate Resistance - 0.8 - Q
Dynamic © To = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
gfs Forward Transconductance 50 - - S Vos = 50V, ID = 20A
q, Total Gate Charge - 73 110 nC lo = 20A
Qgs Gate-to-Source Charge - 24 - VDS = 75V
di Gate-to-Drain ("Miller") Charge - 20 - Vas = 10V ©
Ion) Turn-On Delay Time - 18 - ns VDD = 75V
t, Rise Time - 29 - ID = 20A
td(off) Turn-Off Delay Time - 27 - Ra = 2.59
t, Fall Time - 20 - Vss = 10V ©
Ciss Input Capacitance - 4440 - pF Vos = 0V
Coss Output Capacitance - 390 - VDS = 50V
Crss Reverse Transfer Capacitance - 84 - f = 1.0MHz
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 34 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 140 A integral reverse a
(Body Diode) OD p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 20A, I/ss = 0V ©
trr Reverse Recovery Time - 86 130 ns lo = 20A
Q,, Reverse Recovery Charge - 310 470 nC VR = 128V,
IRRM Reverse Recovery Current - 6.7 - A di/dt = 100A/ps ©
td, Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by max. junction © Pulse width I 400ps; duty cycle s: 2%.
temperature. (40 Re is measured at TJ approximately 90°C
© Limited by TJmaX, starting Tu = 25°C, L = 0.85mH
RG = 2592, lAs = 20A, Ves =10V. Part not recommended for use
above this value.
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