IRFI4229PBF ,250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JConditionsParameter Min. Typ. Ma ..
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IRFl510G
International
irf.JA Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
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IRFI4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
PD - 97201 B
International
Tart Rectifier PDP SWITCH IRFl4229PbF
Features K P t
q Advanced Process Technology ey arame ers
. Key Parameters Optimized for PDP Sustain, Vos max 250 V
Energy Recovery and Pass Switch Applications Vos (Avalanche) typ. 300 V
. Low EPULSE Rating to Reduce Power Rnsww) typ. @ 10V 38 m9
Dissipation in PDP Sustain, Energy Recovery lm, max @ TC: 100°C 32 A
and Pass Switch Applications Tu max 150 "C
. Low ck for Fast Response
q High Repetitive Peak Current Capability for
Reliable Operation D
. Short Fall & Rise Times for Fast Switching
.150°C Operating Junction Temperature for
Improved Ruggedness A
. Repetitive Avalanche Capability for Robustness G
and Reliability
s TO-220AB Full-Pak
Gate Drain Source
Description
This HEXFET6 Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage :30 V
lr, @ To = 25°C Continuous Drain Current, l/ss @ 10V 19 A
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V 12
G, Pulsed Drain Current C) 72
Irv, @ TC = 100°C Repetitive Peak Current s 32
PD @Tc = 25°C Power Dissipation 46 W
PD ©Tc = 100°C Power Dissipation 18
Linear Derating Factor 0.37 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
RGJC Junction-to-Case GD - 2.73 °C/W
RGJA Junction-to-Ambient G) - 65
Notes C) through © are on page 8
1
03/27/08
lRFl4229PbF
International
TOR Rectifier
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 250 - - V Vss = 0V, '0 = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 340 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 38 46 mn Vss = 10V, '0 = 11A (3)
VGSW Gate Threshold Voltage 3.0 - 5.0 V Vos = Ves, ID = 250PA
AVGSMIATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
loss Drain-to-Source Leakage Current - - 2O pA Vos = 250V, Ves = 0V
- - 200 Vos = 250V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gts Forward Transconductance 26 - - S VDs = 25V, ID = 11A
Qg Total Gate Charge - 73 110 nC VDD = 125V, lo = 11A, Vss = 10V©
di Gate-to-Drain Charge - 24 -
td(on) Turn-On Delay Time - 18 - VDD = 125V, Ves = 10V ©
t, Rise Time - 17 - ns '0 =11A
tos) Turn-Off Delay Time - 32 - Re = 2-49
t, Fall Time - 13 - See Fig. 22
tst Shoot Through Blocking Time 100 - - ns VDD = 200V, Vss = 15V, Rs-- 5.1Q
L = 220nH, C= 0.3pF, Vss =15V
EPULSE Energy per Pulse - 770 - pd Vos = 200V, RG-- 5-19, TJ = 25°C
L = 220nH, C= 0.3pF, I/ss =151/
- 1380 - Vos = 200v, Rs-- 5.19, TJ = 100°C
Ciss Input Capacitance - 4480 - I/ss = 0V
Coss Output Capacitance - 400 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz,
Coss eff Effective Output Capacitance - 270 - Vss = 0V, Vos = 0V to 200V
LD Internal Drain Inductance - 4.5 - Between lead, - D
nH 6mm (0.25in.) ir] _ l,
LS Internal Source Inductance - 7.5 - from package Gk /
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 110 mJ
EAR Repetitive Avalanche Energy C) - 4.6 mJ
VosiAvaeanche) Repetitive Avalanche Voltage C) 300 - V
IAS Avalanche Current © - 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 72 integral reverse Cl (rd,
(Body Diode) C) p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = IIA, Vss = 0V (3)
trr Reverse Recovery Time - 120 180 ns Tu = 25°C, IF = 11A, VDD = 50V
Q,, Reverse Recovery Charge - 540 810 nC di/dt = 1OOA/ps (3)
2
