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IRFI4110GPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB FullPak
International
TOR Rectifier
Applications
o High Efficiency Synchronous Rectification in SMPS
PD - 96347
IRFl4110GPbF
HEXFET® Power MOSFET
o 'einai'/,tg,re,tdi2 Powgr Susply Voss 100V
q i ee ower witc in
o Head SSVitched and High Fre%uency Circuits RDson) typ. 3.7mQ
max. 4.5mQ
lr, (Silicon Limited) 72A
Benefits
0 Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness D
. Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability ai"
Lead-Free G
Halogen-Free
s TO-220AB Full-Pak
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
'0 @ Tc = 25°C Continuous Drain Current, VGS © 10V (Silicon Limited) 72 A
ID @ TC = 100°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 51
lo, Pulsed Drain Current co 290
PD @Tc = 25°C Maximum Power Dissipation 61 W
Linear Derating Factor 0.41 W/°C
Vas Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery 6) 27 V/ns
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1.1N'm)
Avalanche Characteristics
EAS (Thermallylimited) Single Pulse Avalanche Energy © 71 mJ
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy GD 6.1 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.46 °C/W
ROJA Junction-to-Ambient C) - 65
01/11/11
IRFI4110GPbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ. Max. Units Conditions
V(Bmss Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 5mACD
RDSM Static Drain-to-Source On-Resistance - 3.7 4.5 mo Vss = 10V, ID = 43A GD
VGsuh, Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - 20 pA I/os = 100V, Vas = 0V
- - 250 l/rss = 100V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
Dynamic © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 260 - - S Vos = 50V, ID = 43A
Qg Total Gate Charge - 190 290 nC ID = 43A
Qgs Gate-to-Source Charge - 40 - Vos = 50V
di Gate-to-Drain ("Miller") Charge - 49 - Vas = 10V ©
Rs Gate Resistance - 1.3 - Q
tum) Turn-On Delay Time - 24 - ns VDD = 65V
t, Rise Time - 58 - ID = 43A
tom Turn-Off Delay Time - 81 - Re = 2.69
t, Fall Time - 71 - Vss = 10V ©
Ciss Input Capacitance - 9540 - pF I/as = 0V
Coss Output Capacitance - 680 - VDS = 50V
Crss Reverse Transfer Capacitance - 300 - f = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related)] - 760 - I/ss = 0V, Vos = 0V to 80V ©
Coss eff. (TR) Effective Output Capacitance (T ime Related)© - 1120 - I/as = 0V, Vos = 0V to 80V G)
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 72 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 290 integral reverse G
(Body Diode) 0DOD p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 v T, = 25°C, ls = 43A, I/ss = OV ©
trr Reverse Recovery Time - 50 75 ns T J = 25°C VR = 85V,
- 60 90 T, = 125°C IF = 43A
Q,, Reverse Recovery Charge - 100 150 nC TJ = 25°C di/dt = 100A/ps ©
- 140 210 TJ=125°C
Ima, Reverse Recovery Current - 3.5 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by max. junction S Cass eff. (TR) is a fixed capacitance that gives the same charging time
temperature. as Cass while VDS is rising from O to 80% Voss.
© Limited by TJmax, starting Tu = 25°C, L = 0.077mH
RG = 259, lAs = 43A, l/ss =10V. Part not recommended for use
above this value.
© ISD S 43A, di/dt S 1600A/ps, VDD S V(BR)ross, Tu S 175°C.
CD Pulse width f 400ps; duty cycle 5 2%.
© Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while Vos is rising from 0 to 80% Voss.
© When mounted on I" square PCB (FR-4 or G-1O Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
Rs is measured at Tu approximately 90°C.
2
