IRFI4020H-117P ,200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.Electrical Characteristics @ T = 25°C (unless otherwise specified)
IRFI4020H-117P
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.
International
2R Rectifier
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDSQN) for improved efficiency
Low Qg and st for better THD and
improved efficiency
Low er for better THD and lower EMI
Can delivery up to 300W per channel into
89 load in half-bridge configuration
amplifier
Lead-free package
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings co
DIGITAL AUDIO MOSFET
PD - 97252
IRFI4020H-117P
Key Parameters (S)
VDS 200 V
RDS(ON) typ. @ 10V 80 m9
09 typ. 19 nC
st typ. 6.8 nC
Ream) typ. 3.0 Q
To max 150 °C
G2 V355”
Sa TO-220 FuII-Pakg PIN
G1, G2 D1, D2 S1, 82
Gate Drain Source
Parameter Max. Units
Vos Drain-to-Source Voltage 200 V
I/ss Gate-to-Source Voltage :20
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 9.1 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.7
G, Pulsed Drain Current C) 36
PD @Tc = 25°C Power Dissipation (ii) 21 w
PD @Tc = 100°C Power Dissipation Ci) 8.5
Linear Derating Factor 0.17 W/°C
EAS Single Pulse Avalanche Energy© 130 mJ
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 1OIb-in (1.1N-m)
Thermal Resistance s
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 5.9 °CNV
RQJA Junction-to-Ambient (free air) - 65
08/22/06
IRFl4020H-'1r7P International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified) s
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V N/ss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 24 - mV/°C Reference to 25°C, ID = 1mA
RDSM Static Drain-to-Source On-Resistance - 80 100 mo l/ss = 10V, ID = 5.5A (3
V6301.) Gate Threshold Voltage 3.0 - 4.9 V 1has = I/ss, ID = 100pA
AVGSMIATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
IDSS Drain-to-Source Leakage Current - - 20 pA VDS = 200V, VGS = 0V
- - 250 Vos = 200v, vGs = ov, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
ge Forward Transconductance 11 - - S Vos = 50V, ID = 5.5A
Qg Total Gate Charge - 19 29
0951 Pre-Vth Gate-to-Source Charge - 4.9 - Vos = 100V
Qgsz Post-Vth Gate-to-Source Charge - 0.95 - nC I/ss = 10V
di Gate-to-Drain Charge - 5.8 - ID = 5.5A
ngd, Gate Charge Overdrive - 7.4 - See Fig. 6 and 15
st Switch Charge (Q952 + di) - 6.8 -
RG(int) Internal Gate Resistance - 3.0 - Q
tdmn) Turn-On Delay Time - 8.4 - VDD = 100V, Vss = 10V ©
tr Rise Time - 8.0 - ID = 5.5A
tum) Turn-Off Delay Time - 18 - ns Rs = 2.49
t, Fall Time - 4.0 -
Ciss Input Capacitance - 1240 - N/ss = 0V
Coss Output Capacitance - 130 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 28 - f = 1.0MHz, See Fig.5
Coss eff. Effective Output Capacitance - 110 - I/ss = 0V, Vos = 0V to 160V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) (rr,' l
Ls Internal Source Inductance - 7.5 - from package 6%;
and center of die contact s
Diode Characteristics G)
Parameter Min. Typ. Max. Units Conditions
ls @ TC = 25°C Continuous Source Current - - 9.1 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 36 integral reverse 9 fl
(Body Diode) OD p-n junction diode. "
I/w Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 5.5A, VGS = 0V ©
trr Reverse Recovery Time - 76 110 ns Tu = 25°C, IF = 5.5A, VDD = 160V
Q,, Reverse Recovery Charge - 230 350 nC di/dt = 100A/ps co
Notes:
co Repetitive rating; pulse width limited by max. junction temperature.
© Starting TJ = 25°C, L = 8.6mH, RG = 259, IAS = 5.5A.
co Pulse width 3 400ps; duty cycle I 2%.
co Re is measured at TJ of approximately 90°C.
s Specifications refer to single MosFET.
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