IRFI4019HG-117P ,150V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) Lead Free and Halogen Free packageElectrical Characteristics @ T = 25°C (unless otherwise specified)
IRFI4019HG-117P
150V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) Lead Free and Halogen Free package
PD - 96274
IRFI4019HG-117P
International
TOR Rectifi er DIGITAL AUDIO MOSFET
Features Key Parameters ©
q Integrated Half-Bridge Package Vos 150 V
. Reduces the Part Count by Half Rosm) typ. @ 101/ 80 mg
. Facilitates Better PCB Layout 09 typ. 13 no
q Key Parameters Optimized for CIass-D st typ. 4.1 nC
Audio Amplifier Applications
q Low RDS(ON) for Improved Efficiency RS(int) typ. 2.5 Q
T J max 150 °C
. Low Og and st for Better THD and
Improved Efficiency
. Low Orr for Better THD and Lower EMI
. Can Delivery up to 200W per Channel into
89 Load in Half-Bridge Configuration _
Amplifier G2 _ _s/'"
. Lead-Free Package s,sil"
q Halogen-Free S2 TO-220 Full-Pak 5 PIN
Sl, S2
Source
G1, G2
Description Gate
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
Absolute Maximum Ratings ©
D1, D2
Parameter Max. Units
Vos Drain-to-Source Voltage 150 V
Vas Gate-to-Source Voltage t20
ID © TC = 25°C Continuous Drain Current, l/ss @ 10V 8.7 A
lo @ To = 100°C Continuous Drain Current, l/ss @ 10V 6.2
bs, Pulsed Drain Current C) 34
EAS Single Pulse Avalanche Energy© 77 mJ
Po @Tc = 25°C Power Dissipation © 18 W
PD @Tc = 100°C Power Dissipation fi) 7.2
Linear Derating Factor 0.15 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1.1N-m)
Thermal Resistance ©
Parameter Typ. Max. Units
RBJC Junction-to-Case GD _ 6.9
RBJA Junction-to-Ambient _ 65
Notes co through © are on page 2
10/08/09
llRFl4019HG-r17P International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified) ©
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 150 - - V Vas = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.19 - V/°C Reference to 25°C, ID = 1mA
Rosom Static Drain-to-Source On-Resistance - 80 95 mo Vas = 10V, ID = 5.2A (3
Vssth) Gate Threshold Voltage 3.0 - 4.9 V Vos = Vas, ID = 50pA
AVGsah/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA Vos = 150V, Vas = 0V
- - 250 Vos = 150v, Vas = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gts Forward Transconductance 11 - - S Vos = 50V, ID = 5.2A
(A, Total Gate Charge - 13 20
0951 Pre-Vth Gate-to-Source Charge - 3.3 - Vos = 75V
0952 Post-Vth Gate-to-Source Charge - 0.8 - nC Vas = 10V
di Gate-to-Drain Charge - 3.9 - ID = 5.2A
ngd, Gate Charge Overdrive - 5.0 - See Fig. 6 and 19
st Switch Charge (0952 + di) - 4.1 -
Ream, Internal Gate Resistance - 2.5 - Q
ton) Turn-On Delay Time - 7.0 - VDD = 75V, Vas = 10V Cl)
t, Rise Time - 6.6 - ID = 5.2A
ti(ott) Turn-Off Delay Time - 13 - ns Rs = 2.49
t, Fall Time - 3.1 -
Ciss Input Capacitance - 810 - Vas = 0V
cu, Output Capacitance - 100 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 15 - f = 1.0MHz, See Fig.5
cu, Effective Output Capacitance - 97 - Vas = 0V, Vos = 0V to 120V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) £5:
LS Internal Source Inductance - 7.5 - from package G "
and center of die contact s
Diode Characteristics ©
Parameter Min. Typ. Max. Units Conditions
Is @ TC = 25°C Continuous Source Current - - 8.7 MOSFET symbol C)
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 34 integral reverse 6 (td,
(Body Diode) C) p-n junction diode. q
Va, Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 5.2A, Vas = 0V (3
trr Reverse Recovery Time - 57 86 ns T J = 25°C, IF = 5.2A
a,, Reverse Recovery Charge - 140 210 nC di/dt = 100A/ps ©
Notes: G) Ro is measured at To of approximately 90°C.
C) Repetitive rating; pulse width limited by max. junction temperature. S Limited by TImax. See Figs. 14, 15, 17a, 17b for repetitive
© Starting Tu = 25°C, L = 5.8mH, Re = 25Q, IAS = 5.2A. avalanche information
© Pulse width 5 400ps; duty cycle 5 2%. © Specifications refer to single MosFET.
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