IRFI1310N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
IRFI1310NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1611AIRFI1310NPRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Isolated Packag ..
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IRFI1310N-IRFI1310NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFI1310N
PRELIMINARYHEXFET® Power MOSFET
PD - 9.1611A
VDSS = 100V
RDS(on) = 0.036Ω
ID = 24AAdvanced Process TechnologyIsolated PackageHigh Voltage Isolation = 2.5KVRMS …Sink to Lead Creepage Dist. = 4.8mmFully Avalanche Rated
TO-220 FULLPAK
ParameterTyp.Max.UnitsRθJCJunction-to-Case–––2.7
RθJAJunction-to-Ambient–––65
Thermal ResistanceFifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Description
ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V24
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V17A
IDMPulsed Drain Current †140
PD @TC = 25°CPower Dissipation56W
Linear Derating Factor0.37W/°C
VGSGate-to-Source Voltage ± 20V
EASSingle Pulse Avalanche Energy‚†420mJ
IARAvalanche Current†22A
EARRepetitive Avalanche Energy5.6mJ
dv/dtPeak Diode Recovery dv/dtĠ5.0V/nsOperating Junction and-55 to + 175
TSTGStorage Temperature Range
Soldering Temperature, for 10 seconds300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw10 lbf•in (1.1N•m)
Absolute Maximum Ratings°C/W
IRFI1310N
ParameterMin.Typ.Max.Units Conditions
V(BR)DSSDrain-to-Source Breakdown Voltage100––––––VVGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient–––0.11–––V/°CReference to 25°C, ID = 1mA†
RDS(on)Static Drain-to-Source On-Resistance––––––0.036ΩVGS = 10V, ID = 13A „
VGS(th)Gate Threshold Voltage2.0–––4.0VVDS = VGS, ID = 250μA
gfsForward Transconductance14––––––SVDS = 25V, ID = 22A†
––––––25μAVDS = 100V, VGS = 0V
––––––250VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage––––––100VGS = 20V
Gate-to-Source Reverse Leakage––––––-100nAVGS = -20VTotal Gate Charge––––––120ID = 22A
QgsGate-to-Source Charge––––––15nCVDS = 80V
QgdGate-to-Drain ("Miller") Charge––––––58VGS = 10V, See Fig. 6 and 13 „†
td(on)Turn-On Delay Time–––11–––VDD = 50VRise Time–––56–––ID = 22A
td(off)Turn-Off Delay Time–––45–––RG = 3.6ΩFall Time–––40–––RD = 2.9Ω, See Fig. 10 „†
Between lead,––––––6mm (0.25in.)
from package
and center of die contact
CissInput Capacitance–––1900–––VGS = 0V
CossOutput Capacitance–––450–––VDS = 25V
CrssReverse Transfer Capacitance–––230–––ƒ = 1.0MHz, See Fig. 5†Drain to Sink Capacitance–––12–––ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)Internal Drain InductanceInternal Source Inductance––––––
IGSS
IDSSDrain-to-Source Leakage Current
Notes: Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 22A. (See Figure 12)
… t=60s, ƒ=60HzISD ≤ 22A, di/dt ≤ 180A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Uses IRF1310N data and test conditions
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
ParameterMin.Typ.Max.Units ConditionsContinuous Source CurrentMOSFET symbol
(Body Diode)––––––showing the
ISMPulsed Source Currentintegral reverse
(Body Diode) †––––––p-n junction diode.
VSDDiode Forward Voltage––––––1.3VTJ = 25°C, IS = 13A, VGS = 0V „
trrReverse Recovery Time–––180270nsTJ = 25°C, IF = 22A
QrrReverse RecoveryCharge–––1.21.8μCdi/dt = 100A/μs „†
tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics140
IRFI1310N
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics 10
100
1000
0.1 1 10 100
20us PULSE WIDTH
T = 25CJo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)4.5V
10
100
1000
0.1 1 10 100
20us PULSE WIDTH
T = 175CJo
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
4.5V
10
100
1000
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
T = 25 CJo
T = 175 CJo
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
DS(on)==
10V
36A
IRFI1310N
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage 10 100
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
0V,
f = 1MHz
+ C
+ C
C SHORTEDGS
issgsgd ,ds
rssgd
ossdsgdiss
Cossrss20406080100120
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE =D
22A= 20VDS= 50VDS= 80VDS
10
100
1000
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
V = 0 V GS 1
10
100
1000 10 100 1000
OPERATION IN THIS AREA LIMITEDBY RDS(on)
Single Pulse
= 175 C
= 25 Co
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
10us
100us
1ms
10ms
IRFI1310N
Fig 10a. Switching Time Test CircuitVDS
90%
10%
VGS
td(on)trtd(off)tf
Fig 10b. Switching Time WaveformsVDS
Pulse Width ≤ 1 μs
Duty Factor ≤ 0.1 %
VGS
D.U.T.
10V-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
10
0.000010.00010.0010.010.1 1 10
Notes:
1. Duty factor D =t / t
2. Peak T=Px Z+ T2DMthJCC
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
thJC
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)5075100125150175
T , Case Temperature( C)
I , Drain Current (A)C
IRFI1310N
QGSQGD
Charge
D.U.T.VDSIG
3mA
VGS
.3μF
50KΩ
.2μF12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors10 V
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain Current5075100125150175
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
TOP
BOTTOM
9.0A
16A
22A
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test CircuitV(BR)DSS
IASG
IAS
0.01Ωtp
D.U.TVDSVDD
DRIVER
15V
20V
