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IRFI1310G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IrttetttatiiEtal PD-9.1222
IOR Rectifier |RF|131OG
HEXFET® Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance
Isolated Package VDSS = 100V
High Voltage Isolation = 2.5KVRMS©
Sink to Lead Creepage Dist. = 4.8mm FN, RDS(on) = 0-049
Repetitive Avalanche Rated
175°C Operating Temperature ID = 22A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external _
heatsink. This isolation is equivalent to using a 100 micron mica barrier with TO-220 FULLPAK
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10V 22
ID @ Tc = 100°C Continuous Collector Current, VGs @ 10V 15 A
IDM Pulsed Drain Current OD 88
Po @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGs Gate-to-Source Voltage t20 V
EAs Single Pulse Avalanche Energy © 120 mJ
IAR Avalanche CurrentCD 22 A
EAR Repetitive Avalanche Energy (D 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rax: Junction-to-Case - - 3.1 ''CAlV
RNA Junction-to-Ambient -r.-- - 65
Revision 0
IRFT1310G
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = OV, ID = 250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.04 Q VGs = 10V, ID = 13A (9
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250PA
9ts Forward Transconductance 12 - - S VDs = 50V, ID = 25A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 100V, Vss = 0V
- - 250 I/os = 80V, I/ss = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 110 ID = 25A
Qgs Gate-to-Source Charge - - 18 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - - 42 I/ss = 10V, See Fig. 6 and 13 G)
Won) Turn-On Delay Time - 13 - VDD = 50V
tr Rise Time - 77 — ns ID = 25A
tum) Turn-Off Delay Time - 82 - Rs = 9.19
tr Fall Time - 64 - Ro = 2.09, See Fig. 10 6)
LD Internal Drain Inductance - 4.5 - Between tar', D
nH 6mm (0.25in.)
LS lntemal Source Inductance - 7 5 - from package a J
. and center of die contact I
Ciss Input Capacitance - 2500 - VGs = 0V
Coss Output Capacitance - 630 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol -7213
(Body Diode) - - 22 showing the y", (rd'),
A . U , 1
ISM Pulsed Source Current integral reverse 'u-P, " 1 jc','
(Body Diode) OD - - 88 p-n junction diode. "--" ',
Vso Diode Forward Voltage - - 2.5 V To = 25°C, Is = 13A, VGS = 0V 6)
trr Reverse Recovery Time - 140 210 ns To = 25°C, IF = 25A
Qrr Reverse RecoveryCharge - 0.79 1.2 pC di/dt = 100/Vps (4)
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting To = 25°C, L = 1.0mH
Rs = 259, IAS = 13A. (See Figure 12)
© ISD 5 25A, di/dt s 170A/us, Voc, s V(BR)DSS, © t=60s, f=60Hz
T J f 175°C
© Pulse width s: 300ps; duty cycle 3 2%.
