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IRFH8311TR2PBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International
TOR Rectifier
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Ihss 30 V
Vgs max 1 20 V
RDS(on) max 2.1
(@VGS = 4.5V) 3.2
ID 8000 A
(@Tc(Bot10m) = 25°C)
Applications
HEXFET© Power MOSFET
PQFN 5X6 mm
q Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Be nefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number Package Type Standard Pack . Orderable part number Note
Form Quantity
IRFH8311TRPBF PQFN 5mm X 6mm Tape and Reel 4000 IRFH8311TRPBF
lREH8344$RQPBF PQFNémmaeémm Ttape-and-Reel 400 IRFH831-1TR2PBF EOL notice #259
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
vss Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 32
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 26
ID @ quomm) = 25°C Continuous Drain Current, Vas @ 10V 169©© A
ID @ quomm, = 100°C Continuous Drain Current, Vos @ 10V 107©©
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 80©
lost Pulsed Drain Current (D 400
Pro @TA = 25°C Power Dissipation s 3.6 W
PD @qumm) = 25°C Power Dissipation © 96
Linear Derating Factor s 0.029 W/°C
T J Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Notes co through (D are on page 9
il © 2014 International Rectifier Submit Datasheet Feedback January 7, 2014
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Static tti) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, '0 = 250PA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = 1.0mA
Roam) Static Drain-to-Source On-Resistance - 1.70 2.10 mn Vas = 10V, ID = 20A (3)
- 2.60 3.20 Vas = 4.5V, ID = 16A ©
VGsnh) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = VGs, ID = 100pA
AVGSm.) Gate Threshold Voltage Coefficient - A3.6 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1 pA Vas = 24V, Vas = 0V
- - 150 Vros = 24V, Vas = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 83 - - S VDs = 10V, ID = 20A
Qg Total Gate Charge - 66 - nC Vas = 10V, Vros = 15V, ID = 20A
09 Total Gate Charge - 30 -
Assl Pre-Vth Gate-to-Source Charge - 9.7 - I/rss = 15V
Aw Post-Vth Gate-to-Source Charge - 3.9 - nC l/ss = 4.5V
qu Gate-to-Drain Charge - 8.6 - ID = 20A
qud, Gate Charge Overdrive - 7.8 -
st Switch Charge (%se + ao) - 12.5 -
QOSS Output Charge - 21 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 0.6 - n
tdmn) Turn-On Delay Time - 21 - VDD = 15V, Vas = 4.5V
t, Rise Time - 26 - ns ID = 20A
tdem) Turn-Off Delay Time - 21 - RG=1.8§2
tt Fall Time - 12 -
Ciss Input Capacitance - 4960 - Vas = 0V
Coss Output Capacitance - 1065 - PF Vas = 10V
Crss Reverse Transfer Capacitance - 455 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 326 mJ
IAR Avalanche Current CD _ 20 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 80(D MOSFET symbol D
(Body Diode) A showing the G
ISM Pulsed Source Current - - 400 integral reverse s
(Body Diode) Ci) p-n junction diode.
Vsro Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 20A, VGS = 0V ©
tr, Reverse Recovery Time - 22 33 ns TJ = 25°C, IF = 20A, Va, = 15V
Qrr Reverse Recovery Charge - 47 71 nC di/dt = 390 Alps ©
ton Forward Tum-On Time Time is dominated by parasitic Inductance
Thermal Resistance
http://www
.loq.com/
Parameter Typ. Max. Units
ROJC (Bottom) Junction-to-Case (CE) - 1.3
ROJC (Top) Junction-to-Case © - 30 oc/W
ROJA Junction-to-Ambient © - 35
RNA (<10s) Junction-to-Ambient © - 0.99
© 2014 International Rectifier Submit Datasheet Feedback January 7, 2014
