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IRFH7928TRPBF from IR,International Rectifier

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15.625ms

IRFH7928TRPBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

Partnumber Manufacturer Quantity Availability
IRFH7928TRPBF IR 1000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package The IRFH7928TRPBF is a MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET®  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 100A  
- **Pulsed Drain Current (IDM):** 400A  
- **RDS(on) (Max):** 1.8mΩ @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 330W  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** PQFN (5x6mm)  

### **Descriptions:**  
- Designed for high-efficiency power conversion in synchronous buck converters.  
- Optimized for low on-resistance and high current handling.  
- Suitable for high-frequency switching applications.  

### **Features:**  
- Low RDS(on) for reduced conduction losses.  
- Fast switching performance.  
- Optimized gate charge for improved efficiency.  
- Lead-free and RoHS compliant.  
- Avalanche energy specified for ruggedness.  

This information is based on Infineon's official datasheet for the IRFH7928TRPBF.

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